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2SB1198


Part Number 2SB1198
Manufacturer Rohm
Title Low-frequency Transistor
Description Transistors Low-frequency Transistor (*80V, *0.5A) 2SB1198K FFeatures 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = *0.5A / *50mA) 2) High ...
Features 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = *0.5A / *50mA) 2) High breakdown voltage. BVCEO = *80V 3) Complements the 2SD1782K. FStructure Epitaxial planar type PNP silicon transistor FExternal dimensions (Unit:s mm) FAbsolute maximum ratings (Ta = 25_C) FElectrical characteristics (Ta = 2...

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2SB1190 : ·With TO-220 package ·High VCEO ·Large PC ·Complement to type 2SD1772 APPLICATIONS ·Power amplifier ·TV vertical deflection output PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 25 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -200 -150 -6 -1 -2 1.4 W UNIT V V V A A SavantIC Semiconductor www.DataSheet4U.com Product Speci.

2SB1190 : ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) ·Complement to Type 2SD1770 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications. ·TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -1 A ICM Collector Current-Peak Total Power Dissipation @ TC=25℃ PC Total Power Dissipation @ Ta=25℃ TJ Junction Temperature -2 A 25 W 1.4 150 ℃ Tstg Storage Temperature Range -55.

2SB1192 : ·With TO-220Fa package ·High VCEO ·Large PC ·Complement to type 2SD1770 APPLICATIONS ·Power amplifier ·TV vertical deflection output PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 25 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -200 -150 -6 -1 -2 2 W UNIT V V V A A SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless oth.

2SB1192 : ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) ·Complement to Type 2SD1772 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications. ·TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -1 A ICM Collector Current-Peak Total Power Dissipation @ TC=25℃ PC Total Power Dissipation @ Ta=25℃ TJ Junction Temperature -2 A 25 W 2 150 ℃ Tstg Storage Temperature Range -55~.

2SB1193 : ·With TO-220Fa package ·High DC current gain ·High speed switching ·DARLINGTON ·Complement to type 2SD1773 APPLICATIONS ·For medium speed switching applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 50 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -120 -120 -7 -8 -12 2 W UNIT V V V A A SavantIC Semiconductor www.DataSheet4U.com Product .

2SB1193 : Power Transistors 2SB1193 Silicon PNP epitaxial planar type darlington Unit: mm • High forward current transfer ratio hFE • High-speed switching • Full-pack package which can be installed to the heat sink with one screw 16.7±0.3 ■ Features 7.5±0.2 φ 3.1±0.1 4.2±0.2 For midium-speed power switching Complementary to 2SD1773 0.7±0.1 10.0±0.2 5.5±0.2 4.2±0.2 2.7±0.2 ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Ta = 25°C Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Ra.

2SB1193 : ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -120V(Min) ·High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -4A) ·Complement to Type 2SD1773 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for midium -speed power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -8 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -12 A 2 W 50 150 ℃ Tstg Storage.

2SB1194 : ·With TO-220Fa package ·High DC current gain ·High speed switching ·DARLINGTON ·Complement to type 2SD1633 APPLICATIONS ·For power switching applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 30 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE -100 -100 -7 -5 -8 -0.5 2 W UNIT V V V A A A SavantIC Semiconductor www.DataSheet4.

2SB1194 : ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -100V(Min) ·High DC Current Gain- : hFE= 1500(Min)@ (VCE= -3V, IC= -3A) ·Complement to Type 2SD1633 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak -8 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -0.5 A 2 W 30 .

2SB1197 : 2SB1197 PNP General Purpose Transistors P b Lead(Pb)-Free Features: * High current capacity in compact package. * Epitaxial planar type. * We declare that the material of product compliance with RoHS requirements. 1 2 3 SOT-23 MAXIMUM RATINGS(Ta=25°C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation TA=25°C Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD Tj Tstg Value -40 -32 -5.0 -800 200 +150 -55 to +150 Unit V V V mA mW °C °C SOT-23 Outline Dimension A TOP VIEW BC D EG H K L J M SOT-23 Dim Min A 0.35 B 1.19 C 2.10 D 0.85 E 0.46 G 1.70 H 2.70 J 0.01 K 0.89 L 0.30 M 0.076.

2SB1197 : Production specification Silicon Epitaxial Planar Transistor FEATURES z Small surface mounting type. z Corredtor peak current(Max.=1000mA). Pb Lead-free z Suitable for high packing density. z Low voltage(Max.=40v). z High saturation current capability. z Voltage controlled small signal switch. APPLICATIONS z Telephone and professional communication equipment. z Other switching appilications. ORDERING INFORMATION Type No. Marking 2SB1197 AHP/AHQ/AHR 2SB1197 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO IC ICM IBM PC RθJA Tj,Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Colle.

2SB1197 : www.DataSheet4U.com MCC Micro Commercial Components TM   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SB1197 2SB1197-P 2SB1197-Q 2SB1197-R PNP Silicon Epitaxial Transistors • • • Features Small Package Mounting:any position ROHS Compliant x Case Material: Molded Plastic. Classification Rating 94V-0 UL Flammability SOT-23 Maximum Ratings @ Ta = 25ć(unless otherwise noted) A Symbol IC PD TJ TSTG Parameter Collector Current Total Device Dissipation Junction Temperature Storage Temperature Range Value -0.8 0.2 150 -55 to +150 Unit A W к к F E D C C B B E Electrical Characteristics @ 25OC Unless Otherwise S.

2SB1197 : BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES z z z z z z Small surface mounting type. Corredtor peak current(Max.=1000mA) Suitable for high packing density. Low voltage(Max.=40v) High saturation current capability. Voltage controlled small signal switch. Production specification 2SB1197 Pb Lead-free APPLICATIONS z z Telephone and professional communication equipment. Other switching appilications. SOT-23 ORDERING INFORMATION Type No. 2SB1197 Marking AHP,AHQ,AHR Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol VCBO VCEO VEBO IC PC Tj,Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -.

2SB1197 : 2SB1197 Elektronische Bauelemente -0.8 A, -40 V PNP Epitaxial Planar Transistor RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES Low VCE(sat).VCE(sat)≦-0.5V(IC / IB = -0.5A /-50mA) IC =-0.8A Complements of the 2SD1781 A L 3 SOT-23 3 Top View C B 1 2 2 CLASSIFICATION OF hFE Product-Rank Range Marking 2SB1197-P 82~180 AHP 2SB1197-Q 120~270 AHQ 2SB1197-R 180~390 AHR F K 1 E D G H J PACKAGE INFORMATION Package SOT-23 MPQ 3K LeaderSize 7’ inch REF. A B C D E F Millimeter Min. Max. 2.80 3.04 2.10 2.55 1.20 1.40 0.89 1.15 1.78 2.04 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0.09 0.18 0.45 0.60 0.08 0.177 0.6 REF. 0.89 1.02 ABSOLUTE MAXIMUM RATINGS .

2SB1197 : 2SB1 1 97 TRANSISTOR(PNP) SOT-23 Unit : mm 1. BASE FEATURES z Low VCE(sat).VCE(sat)-0.5V(IC / IB = -0.5A /-50mA) z IC =-0.8A. Complements the 2SD1781. z MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value -40 -32 -5 -0.8 200 150 -55-150 Units V V V A mW ℃ ℃ 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off c.

2SB1197 : SMD Type SMD Type PNP Transistors 2SB1197 (2SB1197K) Transistors Features Low VCE(sat).VCE(sat) -0.5V IC / IB= -0.5A / -50mA . IC = -0.8A. PNP silicon transistor +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 1.Base 2.Emitter 3.collector 0-0.1 +0.10.38 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-base Voltage Collector-emitter Voltage Emitter-base Voltage Collector current Collector power dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating -40 -32 -5 -0.8 0.2 150 -55 to +150 Unit V V V A W Electrical Characteristics Ta = 25 P.

2SB1197 : JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SB1197 TRANSISTOR (PNP) FEATURES z Low VCE(sat).VCE(sat)-0.5V(IC / IB = -0.5A /-50mA) z IC =-0.8A. z Complements the 2SD1781. SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Unit : mm MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value -40 -32 -5 -0.8 200 150 -55-150 Unit V V V A mW ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown vo.




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