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2SB1236

Part Number	2SB1236
Manufacturer	Rohm
Description	Power Transistor
Published	Mar 22, 2005
Detailed Description	Transistors Power Transistor (−120V, −1.5A) 2SB1236 2SB1236 zFeatures 1) High breakdown voltage. (BVCEO = −120V) 2) Lo...
Datasheet	2SB1236 PDF File

Overview

Transistors Power Transistor (−120V, −1.
5A) 2SB1236 2SB1236 zFeatures 1) High breakdown voltage.
(BVCEO = −120V) 2) Low collector output capacitance.
(Typ.
30pF at VCB = −10V) 3) High transition frequency.
(fT = 50MHz) 4) Complements the 2SD1857.
zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Collector-base voltage VCBO −120 Collector-emitter voltage VCEO −120 Emitter-base voltage VEBO −5 Collector current −1.
5 IC −3 Collector power dissipation PC 1 Junction temperature Tj 150 Storage temperature Tstg −55 to +150 ∗1 Single pulse Pw = 100ms ∗2 Printed circuit board 1.
7mm thick, collector plating 1cm2 or larger.
Unit V V V A (DC) ∗A (Pulse) 1 W ∗2 °C °C ...

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