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2SB1252

Panasonic Semiconductor
Part Number 2SB1252
Manufacturer Panasonic Semiconductor
Description Silicon PNP epitaxial planar type Transistor
Published Mar 22, 2005
Detailed Description Power Transistors 2SB1252 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1892...
Datasheet PDF File 2SB1252 PDF File

2SB1252
2SB1252

Overview
Power Transistors 2SB1252 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1892 10.
0±0.
2 5.
5±0.
2 2.
7±0.
2 4.
2±0.
2 4.
2±0.
2 Unit: mm 7.
5±0.
2 s Features q q q q 0.
7±0.
1 14.
0±0.
5 Optimum for 35W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): < 2.
5V Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings –120 –100 –5 –8 –5 45 2 150 –55 to +150 Unit V V V A A W ˚C ˚C 16.
7±0.
3 φ3.
1±0.
1 4.
0 1.
4±0.
1 1.
3±0.
2 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 0.
8±0.
1 0.
5 +0.
2 –0.
1 2.
54±0.
25 5.
08±0.
5 1 2 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) 3 Internal Connection C B E s Elec...


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