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PBSS4140V

NXP Semiconductors
Part Number PBSS4140V
Manufacturer NXP Semiconductors
Description 40 V low VCEsat NPN transistor
Published Oct 31, 2011
Detailed Description www.DataSheet.co.kr DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS4140V 40 V low VCEsat NPN transistor Product speci...
Datasheet PDF File PBSS4140V PDF File

PBSS4140V
PBSS4140V

Overview
www.
DataSheet.
co.
kr DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS4140V 40 V low VCEsat NPN transistor Product specification Supersedes data of 2001 Nov 05 2002 Jun 20 Datasheet pdf - http://www.
DataSheet4U.
net/ www.
DataSheet.
co.
kr Philips Semiconductors Product specification 40 V low VCEsat NPN transistor FEATURES • 300 mW total power dissipation • Very small 1.
6 mm x 1.
2 mm x 0.
55 mm ultra thin package • Improved thermal behaviour due to flat leads • Excellent coplanarity due to straight leads • Low collector-emitter saturation voltage • High current capabilities • Reduced required PCB area.
APPLICATIONS • General purpose switching and muting • LCD backlighting • Supply line switching circuits • Battery driven equipment (mobile phones, video cameras and hand-held devices).
DESCRIPTION NPN low VCEsat transistor with high current capability in a SOT666 plastic package.
PNP complement: PBSS5140V.
MARKING TYPE NUMBER PBSS4140V MARKING CODE 22 1 Top view 2 3 handbook, halfpage PBSS4140V QUICK REFERENCE DATA SYMBOL VCEO IC ICRP RCEsat PINNING PIN 1 2 3 4 5 6 collector collector base emitter collector collector DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX.
40 1 2 <190 UNIT V A A mΩ 6 5 4 1, 2, 5, 6 3 4 MAM444 Fig.
1 Simplified outline (SOT666) and symbol.
2002 Jun 20 2 Datasheet pdf - http://www.
DataSheet4U.
net/ www.
DataSheet.
co.
kr Philips Semiconductors Product specification 40 V low VCEsat NPN transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL VCBO VCEO VEBO IC ICM ICRP IB IBM Ptot PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current repetitive peak collector current base current (DC) peak base current total power dissipation Tamb ≤ 25 °C; note 2 Tamb ≤ 25 °C; note 3 Tamb ≤ 25 °C; notes 1 and 2 Tstg Tj Tamb Notes 1.
Operated under pulsed conditions: tp ...


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