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2SC1959

Part Number	2SC1959
Manufacturer	Toshiba Semiconductor
Description	PNP Transistor
Published	Mar 22, 2005
Detailed Description	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SC1959 Audio Frequency Low Power Amplifier Applications Dri...
Datasheet	2SC1959 PDF File

Overview

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SC1959 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications 2SC1959 Unit: mm · Excellent hFE linearity: hFE (2) = 25 (min): VCE = 6 V, IC = 400 mA · 1 watt amplifier applications.
· Complementary to 2SA562TM.
Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 35 30 5 500 100 500 150 -55~150 Unit V V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) Cha...

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