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BU705DF

Part Number	BU705DF
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Jan 9, 2012
Detailed Description	isc Silicon NPN Power Transistor BU705DF DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·H...
Datasheet	BU705DF PDF File

Overview

isc Silicon NPN Power Transistor BU705DF DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·High Switching Speed ·Built-in Integrated Efficiency Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of TV receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1350 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 2.
5 A ICM Collector Current-Peak 4 A IB Base Current- Continuous 2 A IBM Base Current-Peak PC Collector Power Dissi...

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