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BU705D

Inchange Semiconductor
Part Number BU705D
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
Published Jan 9, 2012
Detailed Description isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·High Switc...
Datasheet PDF File BU705D PDF File

BU705D
BU705D

Overview
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·High Switching Speed ·Built-in Integrated Efficiency Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of TV receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1300 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 2.
5 A ICM Collector Current-Peak tp<2ms 4 A IB Base Current- Continuous 2 A IBM Base Current-Peak tp<2ms PC Collector Power ...


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