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SI5504DC

Vishay Siliconix
Part Number SI5504DC
Manufacturer Vishay Siliconix
Description Complementary MOSFET
Published Jan 20, 2012
Detailed Description Complementary 30 V (D-S) MOSFET Si5504DC Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) N-Channel 30 0.085 ...
Datasheet PDF File SI5504DC PDF File

SI5504DC
SI5504DC

Overview
Complementary 30 V (D-S) MOSFET Si5504DC Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) N-Channel 30 0.
085 at VGS = 10 V 0.
143 at VGS = 4.
5 V P-Channel - 30 0.
165 at VGS = - 10 V 0.
290 at VGS = - 4.
5 V ID (A) ± 3.
9 ± 3.
0 ± 2.
8 ± 2.
1 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • Compliant to RoHS Directive 2002/95/EC 1206-8 ChipFET® 1 S1 D1 G1 D1 S2 D2 G2 D2 Marking Code EA XX Lot Traceability and Date Code Part # Code Bottom View Ordering Information: Si5504DC-T1-E3 (Lead (Pb)-free) Si5504DC-T1-GE3 (Lead (Pb)-free and Halogen-free) D1 S2 G2 G1 S1 N-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted N-Channel P-Channel Parameter Symbol 5 s Steady State 5 s Steady State Unit Drain-Source Voltage Gate-Source Voltage VDS 30 - 30 V VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 85 °C ID ± 3.
9 ± 2.
8 ± 2.
9 ± 2.
1 ± 2.
8 ± 2.
0 ± 2.
1 ...


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