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SS8P6C

Vishay Siliconix
Part Number SS8P6C
Manufacturer Vishay Siliconix
Description 9SS8P5C / SS8P6C) High Current Density Surface Mount Dual Common-Cathode Schottky Rectifier
Published Jan 28, 2012
Detailed Description www.DataSheet.co.kr New Product SS8P5C, SS8P6C Vishay General Semiconductor High Current Density Surface Mount Dual C...
Datasheet PDF File SS8P6C PDF File

SS8P6C
SS8P6C


Overview
www.
DataSheet.
co.
kr New Product SS8P5C, SS8P6C Vishay General Semiconductor High Current Density Surface Mount Dual Common-Cathode Schottky Rectifier eSMP ® Series K FEATURES • Very low profile - typical height of 1.
1 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • Low thermal resistance • Meets MSL level 1, per LF maximum peak of 260 °C • AEC-Q101 qualified J-STD-020, 1 2 TO-277A (SMPC) K Cathode Anode 1 Anode 2 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM EAS VF at IF = 4 A TJ max.
2 x 4.
0 A 50 V, 60 V 120 A 20 mJ 0.
56 V 150 °C Case: TO-277A (SMPC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS compliant, and automotive grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters and polarity protection application.
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Device marking code Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig.
1) Peak forward surge current 10 ms single half sine-wave superimposed on rated load Non-repetitive avalanche energy at 25 °C, IAS = 2 A per diode Operating junction and storage temperature range total device per diode IF(AV) IFSM EAS TJ, TSTG VRRM SYMBOL SS8P5C S85C 50 8.
0 4.
0 120 20 - 55 to + 150 A mJ °C SS8P6C S86C 60 V A UNIT Document Number: 89028 Revision: 17-May-11 For technical questions within your region, please contact one of the following: www.
vishay.
com DiodesAmericas@vishay.
com, DiodesAsia@vishay.
com, DiodesEurope@vishay.
com...


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