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VF20120S

Vishay
Part Number VF20120S
Manufacturer Vishay
Description High-Voltage Trench MOS Barrier Schottky Rectifier
Published Feb 2, 2012
Detailed Description www.DataSheet.co.kr New Product V20120S, VF20120S, VB20120S & VI20120S Vishay General Semiconductor High-Voltage Tren...
Datasheet PDF File VF20120S PDF File

VF20120S
VF20120S

Overview
www.
DataSheet.
co.
kr New Product V20120S, VF20120S, VB20120S & VI20120S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.
50 V at IF = 5 A TMBS ® TO-220AB ITO-220AB FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation 2 V20120S PIN 1 PIN 2 CASE 3 1 VF20120S PIN 1 PIN 2 2 3 • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.
1 PIN 3 PIN 3 TO-263AB K K TO-262AA A NC 1 VB20120S NC A K HEATSINK 2 3 VI20120S PIN 1 PIN 2 K MECHANICAL DATA Case: TO-220AB, TO-262AA ITO-220AB, TO-263AB and PIN 3 PRIMARY CHARACTERISTICS IF(AV) VRRM I...


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