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VF20120SG

Vishay
Part Number VF20120SG
Manufacturer Vishay
Description High-Voltage Trench MOS Barrier Schottky Rectifier
Published Feb 2, 2012
Detailed Description www.vishay.com VF20120SG Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF ...
Datasheet PDF File VF20120SG PDF File

VF20120SG
VF20120SG

Overview
www.
vishay.
com VF20120SG Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.
54 V at IF = 5 A TMBS ® ITO-220AB 123 VF20120SG PIN 1 PIN 2 PIN 3 FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max.
10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.
vishay.
com/doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
PRIMARY CHARACTERISTICS IF(AV) 20 A VRRM IFSM VF at IF = 20 A 120 V 150 A 0.
78 V TJ max.
150 °C Package ITO-220AB Diode variation Single die MECHANICAL DATA Case: ITO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig.
1) Peak forward surge current 8.
3 ms single half sine-wave superimposed on rated load VRRM IF(AV) IFSM Voltage rate of change (rated VR) Isolation voltage from termal to heatsink t = 1 min dV/dt VAC Operating junction and storage temperature range TJ, TSTG VF20120SG 120 20 150 10 000 1500 -40 to +150 UNIT V A A V/μs V °C Revision: 28-Oct-13 1 Document Number: 89265 For technical questions within your region: DiodesAmericas@vishay.
com, DiodesAsia@vishay.
com, DiodesEurope@vishay.
com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.
vishay.
com/doc?91000 www.
vishay.
com VF20120SG Vishay General Semiconductor ELEC...


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