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VI20120C

Vishay
Part Number VI20120C
Manufacturer Vishay
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Published Mar 28, 2012
Detailed Description New Product V20120C, VF20120C, VB20120C & VI20120C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier S...
Datasheet PDF File VI20120C PDF File

VI20120C
VI20120C

Overview
New Product V20120C, VF20120C, VB20120C & VI20120C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.
54 V at IF = 5 A TMBS ® TO-220AB ITO-220AB FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package) • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-in...


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