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VFT10200C

Vishay
Part Number VFT10200C
Manufacturer Vishay
Description Trench MOS Barrier Schottky Rectifier
Published Feb 7, 2012
Detailed Description www.DataSheet.co.kr New Product VT10200C, VFT10200C, VBT10200C, VIT10200C Vishay General Semiconductor Trench MOS Bar...
Datasheet PDF File VFT10200C PDF File

VFT10200C
VFT10200C

Overview
www.
DataSheet.
co.
kr New Product VT10200C, VFT10200C, VBT10200C, VIT10200C Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.
58 V at IF = 2.
5 A TO-220AB TMBS ® FEATURES ITO-220AB • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) 2 VT10200C PIN 1 PIN 3 PIN 2 CASE 3 1 VFT10200C PIN 1 PIN 3 PIN 2 2 3 • Solder dip 275 °C max.
10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package) • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC 1 TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.
TO-263AB K K TO-262AA MECHANICAL DATA 2 1 1 VBT10200C PIN 1 PIN 2 K HEATSINK 2 3 Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum per VIT10200C PIN 1 PIN 3 PIN 2 K PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 5.
0 A TJ max.
2 x 5.
0 A 200 V 80 A 0.
65 V 150 °C MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig.
1) per device per diode SYMBOL VRRM IF(AV) IFSM EAS IRRM dV/dt VAC TJ, TSTG VT10200C VFT10200C VBT10200C 200 10.
0 5.
0 80 30 0.
5 10 000 1500 - 40 to + 150 VIT10200C UNIT V A A mJ A V/μs V °C Peak forward surge current 8.
3 ms single half sine-wave superimposed on rated load per diode Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH per diode Peak repetitive reverse current at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C per diode Voltage rate of change (rated VR) Is...


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