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VBT1045BP

Part Number	VBT1045BP
Manufacturer	Vishay
Description	Trench MOS Barrier Schottky Rectifier
Published	Mar 28, 2012
Detailed Description	VBT1045BP www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass P...
Datasheet	VBT1045BP PDF File

Overview

VBT1045BP www.
vishay.
com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.
41 V at IF = 5 A FEATURES TMBS® TO-263AB K • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C 2 • Compliant to RoHS Directive 2011/65/EU 1 VBT1045BP PIN 1 PIN 2 K HEATSINK TYPICAL APPLICATIONS For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias.
MECHANICAL DATA PRIMARY CHARACTERISTCS IF(DC) VRRM IFSM VF at IF = 10 A TOP max.
(AC mode) TJ max.
(DC forward current) 10...

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