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2SC3981A

Panasonic Semiconductor
Part Number 2SC3981A
Manufacturer Panasonic Semiconductor
Description Silicon NPN Transistor
Published Mar 22, 2005
Detailed Description Power Transistors 2SC3981, 2SC3981A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed swit...
Datasheet PDF File 2SC3981A PDF File

2SC3981A
2SC3981A

Overview
Power Transistors 2SC3981, 2SC3981A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm s Features q q q q 0.
7 q 16.
2±0.
5 12.
5 3.
5 Solder Dip High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 900 1000 900 1000 800 7 10 5 3 80 3 150 –55 to +150 Unit V 15.
0±0.
3 11.
0±0.
2 5.
0±0.
2 3.
2 21.
0±0.
5 15.
0±0.
2 φ3.
2±0.
1 2.
0±0.
2 2.
0±0.
1 0.
6±0.
2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SC3981 2SC3981A 2SC3981 VCES VCEO VEBO ICP IC IB Ta=25°C PC Tj Tstg Symbol VCBO 1.
1±0.
1 5.
45±0.
3 10.
9±0.
5 1 2 3 emitter voltage 2SC3981A Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Junction temperature Storage temperature V V V A A A W ˚C ˚C 1:Base 2:Collector 3:Emitter TOP–3 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time 2SC3981 2SC3981A (TC=25˚C) Symbol ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 900V, IE = 0 VCB = 1000V, IE = 0 VEB = 7V, IC = 0 IC = 10mA, IB = 0 VCE = 5V, IC = 0.
1A VCE = 5V, IC = 3A IC = 3A, IB = 0.
6A IC = 3A, IB = 0.
6A VCE = 5V, IC = 0.
5A, f = 1MHz IC = 3A, IB1 = 0.
6A, IB2 = –1.
2A, VCC = 250V 15 0.
7 2.
5 0.
3 800 8 6 1.
5 1.
5 V V MHz µs µs µs min typ max 50 50 50 Unit µA µA V 1 Power Transistors PC — Ta 120 12 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=3W) (1) 60 TC=25˚C 10 2SC3981, 2SC3981A IC — VCE Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=5 30 10 3 1 –25˚C 0.
3 0...


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