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2SC4118

Toshiba Semiconductor
Part Number 2SC4118
Manufacturer Toshiba Semiconductor
Description Silicon NPN Transistor
Published Mar 22, 2005
Detailed Description TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4118 Audio Frequency Low Power Amplifier Applications Dri...
Datasheet PDF File 2SC4118 PDF File

2SC4118
2SC4118

Overview
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4118 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications 2SC4118 Unit: mm • Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA) • Complementary to 2SA1588 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 35 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 5 V Collector current IC 500 mA Base current IB 50 mA Collector power dissipation Junction temperature PC 100 mW JEDEC ― Tj 125 °C Storage temperature range Tstg −55 to 125 °C JEITA SC-70 Note: Using continuously under heavy loads (e.
g.
the application of high TOSHIBA 2-2E1A temperature/current/voltage and the significant change in Weight: 0.
006 g (typ.
) temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Marking Start of commercial production 1987-01 1 2014-03-01 2SC4118 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ.
Max Unit Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance ICBO VCB = 35 V, IE = 0 IEBO VEB = 5 V, IC = 0 hFE (1) (Note) VCE = 1 V, IC = 100 mA hFE (2) (Note) VCE = 6 V, IC = 400 mA VCE (sat) IC = 100 mA, IB = 10 mA VBE VCE = 1 V, IC = 100 mA fT VCE = 6 V, IC = 20 mA Cob VCB = 6 V, IE = 0, f = 1 MHz ⎯ ⎯ 0.
1 μA ⎯ ⎯ 0.
1 μA 70 ⎯ 400 25 ⎯ ⎯ ⎯ 0.
1 ...


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