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RJP60F0DPE

Renesas
Part Number RJP60F0DPE
Manufacturer Renesas
Description N-Channel IGBT
Published May 2, 2012
Detailed Description Preliminary Datasheet RJP60F0DPE 600 V - 25 A - IGBT High Speed Power Switching Features  Low collector to emitter sat...
Datasheet PDF File RJP60F0DPE PDF File

RJP60F0DPE
RJP60F0DPE

Overview
Preliminary Datasheet RJP60F0DPE 600 V - 25 A - IGBT High Speed Power Switching Features  Low collector to emitter saturation voltage VCE(sat) = 1.
4 V typ.
(at IC = 25 A, VGE = 15V, Ta = 25°C)  Trench gate and thin wafer technology  High speed switching tf = 90 ns typ.
(at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load) R07DS0540EJ0100 Rev.
1.
00 Sep 09, 2011 Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) C 4 G 1 2 3 E 1.
Gate 2.
Collector 3.
Emitter 4.
Collector www.
DataSheet.
co.
kr Absolute Maximum Ratings (Tc = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25 °C Tc = 100°C Collector peak cur...


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