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RJP60F0DPM

Renesas
Part Number RJP60F0DPM
Manufacturer Renesas
Description N-Channel IGBT
Published May 2, 2012
Detailed Description Preliminary Datasheet RJP60F0DPM 600 V - 25 A - IGBT High Speed Power Switching Features  Low collector to emitter sat...
Datasheet PDF File RJP60F0DPM PDF File

RJP60F0DPM
RJP60F0DPM

Overview
Preliminary Datasheet RJP60F0DPM 600 V - 25 A - IGBT High Speed Power Switching Features  Low collector to emitter saturation voltage VCE(sat) = 1.
4 V typ.
(at IC = 25 A, VGE = 15 V, Ta = 25°C)  Trench gate and thin wafer technology  High speed switching R07DS0585EJ0100 Rev.
1.
00 Nov 25, 2011 Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) C G 1.
Gate 2.
Collector 3.
Emitter E 1 2 3 www.
DataSheet.
co.
kr Absolute Maximum Ratings (Tc = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25 °C Tc = 100°C Collector peak current Collector dissipation Junction to case thermal impedance Channel temperature Storage temperature Notes: 1.
P...


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