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AM4438N

Analog Power
Part Number AM4438N
Manufacturer Analog Power
Description MOSFET
Published May 14, 2012
Detailed Description Analog Power N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench proces...
Datasheet PDF File AM4438N PDF File

AM4438N
AM4438N

Overview
Analog Power N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation.
Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
• • • • Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOIC-8 saves board space Fast switching speed High performance trench technology AM4438N PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 32 @ VGS = 4.
5V 30 40 @ VGS = 2.
5V ID (A) 8.
1 7.
2 1 2 3 4 8 7 6 5 ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Units VDS Drain-Source Voltage 30 V ±8 Gate-Source Voltage VGS www.
DataSheet.
co.
kr o Continuous Drain Current Pulsed Drain Current b a TA=25 C TA=70 C o o ID IDM ±8.
1 ±6.
6 ±50 2.
3 3.
1 2.
2 A W o A Continuous Source Current (Diode Conduction) Power Dissipation a a IS TA=25 C TA=70 C o o PD Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t <= 10 sec Steady State Symbol RθJA Maximum 50 92 Units o o C/W C/W Notes a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature 1 PRELIMINARY Publication Order Number: DS-AM4438_A Datasheet pdf - http://www.
DataSheet4U.
net/ Analog Power AM4438N SPECIFICATIONS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current A o Symbol V(BR)DSS VGS(th) IGSS IDSS ID(on) A Test Conditions VGS = 0 V, ID = 250 uA VDS = VGS, ID = 250 uA VDS = 0 V, VGS = ±8 V Min 30 1.
0 Limits Unit Typ Max V nA uA A 32 40 40 0.
7 7 2 3 10 12 25 11 nC mΩ S V 1.
5 ±100 VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, T J = 55oC 1 25 8...


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