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RFHA1006

Part Number	RFHA1006
Manufacturer	RF Micro Devices
Description	9W GaN WIDEBAND POWER AMPLIFIER
Published	Jun 14, 2012
Detailed Description	RFHA1006 225MHz to 1215MHz, 9W GaN Wideband Power Amplifier RFHA1006 225MHz TO 1215MHz, 9W GaN WIDEBAND POWER AMPLIFIER...
Datasheet	RFHA1006 PDF File

Overview

RFHA1006 225MHz to 1215MHz, 9W GaN Wideband Power Amplifier RFHA1006 225MHz TO 1215MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 Features     VGS Pin 1 Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology 225MHz to 1215MHz Instantaneous Bandwidth Input Internally Matched to 50 28V Operation Typical Performance Output Power 39.
5dBm Gain 16dB  Power Added Efficiency 60% -40°C to 85°C Operating Temperature   RF IN Pin 2,3 RF OUT / VDS Pin 6,7   GND BASE Functional Block Diagram  Product Description The RFHA1006 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADA...

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