DatasheetsPDF.com

RFHA1003

Part Number	RFHA1003
Manufacturer	RF Micro Devices
Description	9W GaN WIDEBAND
Published	Nov 1, 2012
Detailed Description	RFHA1003 30MHz to 512MHz, 9W GaN Wideband Power Amplifier RFHA1003 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER Pac...
Datasheet	RFHA1003 PDF File

Overview

RFHA1003 30MHz to 512MHz, 9W GaN Wideband Power Amplifier RFHA1003 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 Features     VGS Pin 1 Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology 30MHz to 512MHz Instantaneous Bandwidth Input Internally Matched to 50 28V Operation Typical Performance Output Power 39.
5dBm Gain 19dB  Power Added Efficiency 70% -40°C to 85°C Operating Temperature   RF IN Pin 2,3 RF OUT / VDS Pin 6,7   GND BASE Functional Block Diagram  Product Description The RFHA1003 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two...

Similar Datasheet

RFHA1000 15W GaN WIDE-BAND POWER AMPLIFIER - RF Micro Devices
RFHA1003 9W GaN WIDEBAND - RF Micro Devices
RFHA1006 9W GaN WIDEBAND POWER AMPLIFIER - RF Micro Devices
RFHA1020 280W GaN WIDE-BAND PULSED POWER AMPLIFIER - RF Micro Devices
RFHA1023 225W GaN WIDE-BAND PULSED POWER AMPLIFIER - RF Micro Devices
RFHA1025 280W GaN WIDEBAND PULSED POWER AMPLIFIER - RFMD

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)