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RJP1CS06DWT

Renesas
Part Number RJP1CS06DWT
Manufacturer Renesas
Description IGBT
Published Jul 21, 2012
Detailed Description Preliminary Datasheet RJP1CS06DWT/RJP1CS06DWA Silicon N Channel IGBT Application: Inverter Features  Low collector to ...
Datasheet PDF File RJP1CS06DWT PDF File

RJP1CS06DWT
RJP1CS06DWT

Overview
Preliminary Datasheet RJP1CS06DWT/RJP1CS06DWA Silicon N Channel IGBT Application: Inverter Features  Low collector to emitter saturation voltage VCE(sat) = 1.
8 V typ.
(at IC = 100 A, VGE = 15 V, Ta = 25C)  High speed switching  Short circuit withstands time (10 s min.
) R07DS0829EJ0002 Rev.
0.
02 Jul 05, 2012 Outline Die: RJP1CS06DWT-80 2 C 3 Wafer: RJP1CS06DWA-80 2 1G 1 3 1.
Gate 2.
Collector (The back) 3.
Emitter E 3 3 www.
DataSheet.
net/ Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Junction temperature Symbol VCES VGES IC Note1 IC Note1 Tj Ratings 1250 ±30 200 100 150 Unit V V A A C No...


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