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RJP1CS06DWA

Renesas
Part Number RJP1CS06DWA
Manufacturer Renesas
Description IGBT
Published Jul 21, 2012
Detailed Description Preliminary Datasheet RJP1CS06DWT/RJP1CS06DWA Silicon N Channel IGBT Application: Inverter Features  Low collector to ...
Datasheet PDF File RJP1CS06DWA PDF File

RJP1CS06DWA
RJP1CS06DWA

Overview
Preliminary Datasheet RJP1CS06DWT/RJP1CS06DWA Silicon N Channel IGBT Application: Inverter Features  Low collector to emitter saturation voltage VCE(sat) = 1.
8 V typ.
(at IC = 100 A, VGE = 15 V, Ta = 25C)  High speed switching  Short circuit withstands time (10 s min.
) R07DS0829EJ0002 Rev.
0.
02 Jul 05, 2012 Outline Die: RJP1CS06DWT-80 2 C 3 Wafer: RJP1CS06DWA-80 2 1G 1 3 1.
Gate 2.
Collector (The back) 3.
Emitter E 3 3 www.
DataSheet.
net/ Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Junction temperature Symbol VCES VGES IC Note1 IC Note1 Tj Ratings 1250 ±30 200 100 150 Unit V V A A C Notes: 1.
This data is a regulated value in evaluation package.
R07DS0829EJ0002 Rev.
0.
02 Jul 05, 2012 Page 1 of 3 Datasheet pdf - http://www.
DataSheet4U.
co.
kr/ RJP1CS06DWT/RJP1CS06DWA Preliminary Electrical Characteristics (These data are an actual measurement value in evaluation package.
) (Ta = 25°C) Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reveres transfer capacitance Switching time Symbol ICES IGES VGE(off) VCE(sat) Cies Coes Cres td(on) tr td(off) tf tsc Min — — 5.
0 — — — — — — — — 10 Typ — — — 1.
8 10.
0 0.
30 0.
23 70 60 420 130 — Max 1 ±1 6.
8 2.
3 — — — — — — — — Unit A A V V nF nF nF ns ns ns ns s Test Conditions VCE = 1250 V, VGE = 0 VGE = ±30 V, VCE = 0 VCE = 10 V, IC = 3.
3mA IC = 100 A, VGE = 15 V Note2 VCE = 25 V VGE = 0 f = 1 MHz VCC = 600 V IC = 100 A VGE =±15 V Rg = 10 , Tj = 125 C Inductive load VCC  720 V , VGE = 15 V Tj = 150 C Note3 Short circuit withstand time Notes: 2.
Pulse test.
3.
Switching time test circuit and waveform are shown below.
Switching Time Test Circuit Waveform VGE Diode clamp L VCC D.
U.
T Rg 90% 10% www.
DataSheet.
net/ IC 90% 90% 10% td(off) tf td(on) 10% tr R07DS0829EJ0002 Rev.
0.
02 Jul 05, 2...


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