DatasheetsPDF.com

ER2001CT

Pan Jit International
Part Number ER2001CT
Manufacturer Pan Jit International
Description SUPERFAST RECOVERY RECTIFIER
Published Aug 20, 2012
Detailed Description ER2000CT~ER2006CT ISOLATION SUPERFAST RECOVERY RECTIFIER VOLTAGE FEATURES • Plastic package has Underwriters Laboratory ...
Datasheet PDF File ER2001CT PDF File

ER2001CT
ER2001CT

Overview
ER2000CT~ER2006CT ISOLATION SUPERFAST RECOVERY RECTIFIER VOLTAGE FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency.
• Low forwrd voltge, high current capability • High surge capacity.
• Super fast recovery times, high voltage.
• Epitaxial chip construction.
.
058(1.
47) 50 to 600 Volts CURRENT 20.
0 Amperes • In compliance with EU RoHS 2002/95/EC directives .
042(1.
07) MECHANICALDATA • Case: TO-220AB Molded plastic • Terminals: Lead solderable per MIL-STD-750, Method 2026 • Polarity: As marked.
• Standard packaging: Any • Weight: 0.
0655 ounces, 1.
859 grams.
MAXIMUM RATING AND ELECTRICAL CHARACTERISTICSS Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20% www.
DataSheet.
net/ PARAMETER Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current at Tc=90o C Peak Forward Surge Current : 8.
3ms single half sine-wave superimposed on rated load(JEDEC method) Maximum Forward Voltage at 10A Maximum DC Reverse Current TJ =25 O C at Rated DC Blocking VoltageTJ =100 O C Maximum Reverse Recovery Time (Note 2) Typical Junction capacitance (Note 1) Typical thermal Resistance (Note 3) Operating Junction and Storage Temperature Range SYMBOL VR R M VR M S VD C IF (A V ) IF S M VF IR ER2000CT ER2001CT ER2001ACT ER2002CT ER2003CT ER2004CT ER2006CT UNITS V V V A A 50 35 50 100 70 100 150 105 150 200 140 200 20.
0 150 300 210 300 400 280 400 600 420 600 0.
95 1 500 35 85 3.
0 -50 to +150 1.
3 1.
7 V µA trr CJ RθJ c TJ ,TS T G 50 100 ns pF O C/W O C NOTES: 1.
Measured at 1 MHz and applied reverse voltage of 4.
0 VDC.
2.
Reverse Recovery Test Conditions: IF=.
5A, IR=1A, Irr=.
25A.
3.
Both Bonding and Chip structure are available.
ST...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)