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2N6052

Part Number	2N6052
Manufacturer	ON Semiconductor
Description	DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTOR
Published	Mar 22, 2005
Detailed Description	2N6052 Preferred Device Darlington Complementary Silicon Power Transistors This package is designed for general−purpos...
Datasheet	2N6052 PDF File

Overview

2N6052 Preferred Device Darlington Complementary Silicon Power Transistors This package is designed for general−purpose amplifier and low frequency switching applications.
Features • High DC Current Gain — hFE = 3500 (Typ) @ IC = 5.
0 Adc • Collector−Emitter Sustaining Voltage — @ 100 mA VCEO(sus) = 100 Vdc (Min) • Monolithic Construction with Built−In Base−Emitter Shunt Resistors • This is a Pb−Free Device* MAXIMUM RATINGS (Note 1) Rating Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous Peak Base Current Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Range Symbol VCEO VCB VEB IC IB PD TJ, Tstg ...

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