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2N2906A

Comset Semiconductor
Part Number 2N2906A
Manufacturer Comset Semiconductor
Description General Purpose Amplifier Transistors
Published Nov 30, 2012
Detailed Description PNP 2N2906 – 2N2906A GENERAL PURPOSE AMPLIFIERS TRANSISTORS The 2N2906 and 2N2906A are PNP transistors mounted in TO-18 ...
Datasheet PDF File 2N2906A PDF File

2N2906A
2N2906A

Overview
PNP 2N2906 – 2N2906A GENERAL PURPOSE AMPLIFIERS TRANSISTORS The 2N2906 and 2N2906A are PNP transistors mounted in TO-18 metal package.
They are intended for high speed switching and general purpose applications.
NPN complements are 2N2221 and 2N2221A .
Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO IC ICM IBM Ratings Collector-Emitter Voltage (IB=0) Collector-Base Voltage (IE=0) Emitter-Base Voltage (IC=0) www.
DataSheet.
net/ Value 2N2906 -40 -60 -5 -600 -800 -200 Tamb = 25° 0.
4 1.
2 200 -65 to +150 -65 to +150 Unit -60 V V V mA mA mA W W °C °C °C 2N2906A Collector Current Peak Collector Current Peak Base Current PD Total Power Dissipation Tcase= 25° TJ TStg Tamb Junction Temperature Storage Temperature range Operating Ambient Temperature THERMAL CHARACTERISTICS Symbol RthJ-a RthJ-c Ratings Thermal Resistance, Junction to ambient in free air Thermal Resistance, Junction to case Value 438 146 Unit °C/W °C/W Datasheet pdf - http://www.
DataSheet4U.
co.
kr/ PNP 2N2906 – 2N2906A ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICBO ICBO IEBO VCEO VCBO VEBO Ratings Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current (*) Collector Emitter Breakdown Voltage Collector Base Breakdown Voltage Emitter Base Breakdown Voltage Test Condition(s) VCB= -50 V Ta= 25°C IE= 0 Ta= 150°C VEB= -5 V, IC= 0 IC= -10 mA, IB= 0 IC= -10 µA, IE= 0 IE= -10 µA, IC= 0 IC= -0.
1 mA, VCE= -10 V IC= -1 mA, VCE= -10 V www.
DataSheet.
net/ Min -60 -40 -60 -5 40 20 40 25 40 35 40 40 20 200 - Typ - Max -10 -20 -10 -20 -50 120 -0.
4 -1.
6 Unit nA µA nA V V V hFE DC Current Gain IC= -10 mA, VCE= -10 V IC= -150 mA, VCE= -10 V IC= -500 mA, VCE= -10 V VCE(SAT) Collector-Emitter saturation Voltage (*) Base-Emitter saturation Voltage (*) Transition frequency Delay time Rise time Collector capacitance IC= -150 mA, IB= -15 mA IC= -500 mA, IB= -50 mA IC= -150 mA, IB= -15 mA IC= -500 mA, IB= -50 mA VBE(SAT) fT td tr Cc Ce IC=-50 mA, VCE=-2...


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