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2N2907A

Comset Semiconductor
Part Number 2N2907A
Manufacturer Comset Semiconductor
Description General Purpose Amplifier Transistors
Published Nov 30, 2012
Detailed Description PNP 2N2907 – 2N2907A GENERAL PURPOSE AMPLIFIERS TRANSISTORS The 2N2907 and 2N2907A are PNP transistors mounted in TO-18 ...
Datasheet PDF File 2N2907A PDF File

2N2907A
2N2907A

Overview
PNP 2N2907 – 2N2907A GENERAL PURPOSE AMPLIFIERS TRANSISTORS The 2N2907 and 2N2907A are PNP transistors mounted in TO-18 metal package with the collector connected to the case .
They are primarily intended for high speed switching.
NPN complements are 2N2222 and 2N2222A .
Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO IC PD PD TJ TStg Ratings Collector-Emitter Voltage Collector-Base Voltage www.
DataSheet.
net/ Value 2N2907A 2N2907 2N2907A 2N2907 2N2907A 2N2907 2N2907A 2N2907 2N2907A 2N2907 2N2907A 2N2907 2N2907A 2N2907 2N2907A 2N2907 -60 -40 -60 -60 -5 -5 -600 0.
4 1.
8 200 -65 to +200 Unit V V V mA Watts Watts °C °C Emitter-Base Voltage Collector Current Total Power Dissipation Total Power Dissipation Junction Temperature Storage Temperature range @ Tamb = 25° @ Tcase= 25° THERMAL CHARACTERISTICS Symbol RthJ-a RthJ-c Ratings Thermal Resistance, Junction to ambient in free air Thermal Resistance, Junction to case 2N2907A 2N2907 2N2907A 2N2907 Value 350 146 Unit K/W K/W COMSET SEMICONDUCTORS 1/3 Datasheet pdf - http://www.
DataSheet4U.
co.
kr/ PNP 2N2907 – 2N2907A ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICBO ICBO ICEX VCEO VCBO VEBO Ratings Collector Cutoff Current Collector Cutoff Current Collector Cutoff Current Collector Emitter Breakdown Voltage Collector Base Breakdown Voltage Emitter Base Breakdown Voltage Test Condition(s) VCB=-50 V, IE=0 VCB=-50 V, IE=0 Tj=150°C VCE=-30 V VBE=0.
5V IC=-10 mA IB=0 IC=-10 µA IE=0 IE=-10 µA IC=0 IC=-0.
1 mA VCE=-10 V IC=-1 mA VCE=-10 V www.
DataSheet.
net/ Min -60 -40 -60 -60 -5 -5 75 100 100 100 50 30 - Typ - Max -10 -20 -10 -20 -50 300 -0.
4 -0.
4 -1.
6 -1.
6 -1.
3 -1.
3 -2.
6 -2.
6 Unit nA µA nA V V V hFE VCE(SAT) VBE(SAT) IC=-10 mA VCE=-10 V IC=-150 mA VCE=-10 V IC=-500 mA VCE=-10 V IC=-150 mA Collector-Emitter saturation IB=-15 mA Voltage (*) IC=-500 mA IB=-50 mA IC=-150 mA IB=-15 mA Base-Emitter saturation Voltage (*) IC=-500 mA IB=-50 mA DC Current Gain (*) 2N2907A 2N2907 2...


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