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BDX33D


Part Number BDX33D
Manufacturer TRANSYS
Title (BDX33 / BDX34) NPN/PNP PLASTIC POWER TRANSISTORS
Description SYMBOL Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current Continuous Peak Base Current Device Dissipation ...
Features mA, IB=0 IC=100mA, RBE=100 W IC=100mA, VBE=1.5V VCE=1/2rated VCEO, IB=0 Tc=100ºC VCE=1/2rated VCEO, IB=0 ICBO IE=0,VCB=Rated VCBO, Tc=100ºC IE=0,VCB=Rated VCBO, 45 60 80 100 120 UNIT V 45 45 0.5 60 60 0.5 80 80 0.5 100 100 0.5 120 120 0.5 V V mA 10 10 10 10 10 ...

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BDX33 : BDX33/A/B/C BDX33/A/B/C Power Linear and Switching Applications • High Gain General Purpose • Power Darlington TR • Complement to BDX34/34A/34B/34C respectively 1 TO-220 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BDX33 : BDX33A : BDX33B : BDX33C VCEO Collector-Emitter Voltage : BDX33 : BDX33A : BDX33B : BDX33C Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature 45 60 80 100 45 60 80 100 10 15 0.25 70 150 - 65 ~ 150 V V V V V V V V A A A W °C °C Value Units IC ICP IB PC TJ TSTG ©2000 .

BDX33 : SYMBOL Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current - Continuous Peak Base Current Device Dissipation @ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to Case VCEO VCBO VEBO IC ICM IB PD Tj, Tstg Rth(j-c) BDX33 BDX34 45 45 BDX33A BDX33B BDX33C BDX33D BDX34A BDX34B BDX34C BDX34D 60 80 100 120 60 80 100 120 5.0 UNIT V V V 10 A 15 A 0.25 A 70 W 0.56 W/ºC -65 to +150 ºC 1.78 ºC/W ELECTRICAL CHARACTERISTICS (Tc=25ºC Unless Otherwise Specified) DESCRIPTION SYMBOL TEST BDX33 BDX33A BDX33B BDX33C BDX33D CONDITION BDX34 BDX34A BDX34B BDX34C BDX34D UNIT Breakdown (sus) Voltage Colle.

BDX33 : MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BDX33 THRU BDX33D 0,9:708 • Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates RoHS Compliant. See ordering information) • Designed For Complementary Use with BDX34, BDX34A, BDX34B, :BDX34C and BDX34D • 70W at 25 Cass Temperature NPN Silicon Power Darlingtons • 10A Continuous Collector Current • Minimum hFE of 750 at 3.0V, 3.0A • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 °$EVROXWH 0D[LPXP 5DWLQJV #  & 8QOHVV 2WKHUZLVH 1RWHG TO-220 Symbol VCBO VCEO VEBO IC IB PTOT PTOT TJ TSTG TA Rating Co.

BDX33 : www.DataSheet4U.com BDX33, BDX33A, BDX33B, BDX33C, BDX33D NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDX34, BDX34A, BDX34B, BDX34C and BDX34D 70 W at 25°C Case Temperature 10 A Continuous Collector Current Minimum hFE of 750 at 3V, 3 A B C E TO-220 PACKAGE (TOP VIEW) ● ● ● 1 2 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING BDX33 BDX33A Collector-base voltage (IE = 0) BDX33B BDX33C BDX33D BDX33 BDX33A Collector-emitter voltage (IB = 0) BDX33B BDX33C BDX33D Emitter-base voltage Continuous collector current Continuous base current Continuous device dissipation at .

BDX33 : MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BDX33 THRU BDX33D NPN Silicon Power Darlingtons 0,9:708 • • • • • • • Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates RoHS Compliant. See ordering information) Designed For Complementary Use with BDX34, BDX34A, BDX34B, BDX34C and BDX34D 70W at 25 Cass Temperature 10A Continuous Collector Current Minimum hFE of 750 at 3.0V, 3.0A : Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 $EVROXWH 0D[LPXP 5DWLQJV #  °& 8QOHVV 2WKHUZLVH 1RWHG Value 45 60 80 100 100 45 60 80 100 100 5.0 10 0.3 70 2.0 -55~+1.

BDX33 : SYMBOL Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current Continuous Peak Base Current Device Dissipation @ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to Case VCEO VCBO VEBO IC ICM IB PD www.DataSheet.net/ BDX33 BDX34 45 45 BDX33A BDX33B BDX33C BDX33D BDX34A BDX34B BDX34C BDX34D 60 80 100 120 60 80 100 120 5.0 10 15 0.25 70 0.56 -65 to +150 UNIT V V V A A A W W/ºC ºC Tj, Tstg Rth(j-c) 1.78 ºC/W ELECTRICAL CHARACTERISTICS (Tc=25ºC Unless Otherwise Specified) DESCRIPTION SYMBOL TEST BDX33 BDX33A BDX33B BDX33C BDX33D CONDITION BDX34 BDX34A BDX34B BDX34C BDX34D Breakdown (sus) Voltage VCEO.

BDX33 : NPN BDX33 – BDX33A – BDX33B – BDX33C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS The BDX33B, BDX33B and BDX33C are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are the BDX34A, BDX34B and BDX34C respectively. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings www.DataSheet.net/ Value BDX33 BDX33A BDX33B BDX33C BDX33 BDX33A BDX33B BDX33C 45 60 80 100 45 60 80 100 10 15 0.25 70 -65 to +150 Unit VCEO Collector-Emitter Voltage IB=0 V VCBO Collector-Base Voltage IE=0 IC(RMS) ICM @ TC = .

BDX33 : ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 45V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 4A ·Low Collector Saturation Voltage : VCE(sat)= 2.5V(Max.)@ IC= 4A ·Complement to Type BDX34 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 45 VCEO Collector-Emitter Voltage 45 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 10 ICM Collector Current-Peak 15 IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperat.

BDX33 : BDX33, 34 Darlington Transistors Features: • Collector-Emitter sustaining voltageVCEO(sus) = 80V (Minimum) - BDX33B, BDX34B = 100V (Minimum) - BDX33C, BDX34C • Monolithic construction with Built-in Base-Emitter shunt resistor. Pin 1. Base 2. Collector 3. Emitter 4. Collector(Case) Dimensions Minimum Maximum A 14.68 15.31 B 9.78 10.42 C 5.01 6.52 D 13.06 14.62 E 3.57 4.07 F 2.42 3.66 G 1.12 1.36 H 0.72 0.96 I 4.22 4.98 J 1.14 1.38 K 2.20 2.97 L 0.33 0.55 M 2.48 2.98 O 3.70 3.90 Dimensions : Millimetres NPN BDX33B BDX33C PNP BDX34B BDX34C 10 Ampere Complementary Silicon Power Transistors 80 - 100 Volts 70 Watts TO-220 Page 1 31/05/05 V1.0 BDX33, 34 Darlington Transi.

BDX33A : BDX33/A/B/C BDX33/A/B/C Power Linear and Switching Applications • High Gain General Purpose • Power Darlington TR • Complement to BDX34/34A/34B/34C respectively 1 TO-220 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BDX33 : BDX33A : BDX33B : BDX33C VCEO Collector-Emitter Voltage : BDX33 : BDX33A : BDX33B : BDX33C Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature 45 60 80 100 45 60 80 100 10 15 0.25 70 150 - 65 ~ 150 V V V V V V V V A A A W °C °C Value Units IC ICP IB PC TJ TSTG ©2000 .

BDX33A : SYMBOL Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current - Continuous Peak Base Current Device Dissipation @ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to Case VCEO VCBO VEBO IC ICM IB PD Tj, Tstg Rth(j-c) BDX33 BDX34 45 45 BDX33A BDX33B BDX33C BDX33D BDX34A BDX34B BDX34C BDX34D 60 80 100 120 60 80 100 120 5.0 UNIT V V V 10 A 15 A 0.25 A 70 W 0.56 W/ºC -65 to +150 ºC 1.78 ºC/W ELECTRICAL CHARACTERISTICS (Tc=25ºC Unless Otherwise Specified) DESCRIPTION SYMBOL TEST BDX33 BDX33A BDX33B BDX33C BDX33D CONDITION BDX34 BDX34A BDX34B BDX34C BDX34D UNIT Breakdown (sus) Voltage Colle.

BDX33A : MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BDX33 THRU BDX33D 0,9:708 • Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates RoHS Compliant. See ordering information) • Designed For Complementary Use with BDX34, BDX34A, BDX34B, :BDX34C and BDX34D • 70W at 25 Cass Temperature NPN Silicon Power Darlingtons • 10A Continuous Collector Current • Minimum hFE of 750 at 3.0V, 3.0A • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 °$EVROXWH 0D[LPXP 5DWLQJV #  & 8QOHVV 2WKHUZLVH 1RWHG TO-220 Symbol VCBO VCEO VEBO IC IB PTOT PTOT TJ TSTG TA Rating Co.

BDX33A : SYMBOL Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current Continuous Peak Base Current Device Dissipation @ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to Case VCEO VCBO VEBO IC ICM IB PD www.DataSheet.net/ BDX33 BDX34 45 45 BDX33A BDX33B BDX33C BDX33D BDX34A BDX34B BDX34C BDX34D 60 80 100 120 60 80 100 120 5.0 10 15 0.25 70 0.56 -65 to +150 UNIT V V V A A A W W/ºC ºC Tj, Tstg Rth(j-c) 1.78 ºC/W ELECTRICAL CHARACTERISTICS (Tc=25ºC Unless Otherwise Specified) DESCRIPTION SYMBOL TEST BDX33 BDX33A BDX33B BDX33C BDX33D CONDITION BDX34 BDX34A BDX34B BDX34C BDX34D Breakdown (sus) Voltage VCEO.

BDX33A : NPN BDX33 – BDX33A – BDX33B – BDX33C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS The BDX33B, BDX33B and BDX33C are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are the BDX34A, BDX34B and BDX34C respectively. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings www.DataSheet.net/ Value BDX33 BDX33A BDX33B BDX33C BDX33 BDX33A BDX33B BDX33C 45 60 80 100 45 60 80 100 10 15 0.25 70 -65 to +150 Unit VCEO Collector-Emitter Voltage IB=0 V VCBO Collector-Base Voltage IE=0 IC(RMS) ICM @ TC = .

BDX33A : ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 4A ·Low Collector Saturation Voltage : VCE(sat)= 2.5V(Max.)@ IC= 4A ·Complement to Type BDX34A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ .

BDX33A : www.DataSheet4U.com BDX33, BDX33A, BDX33B, BDX33C, BDX33D NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDX34, BDX34A, BDX34B, BDX34C and BDX34D ● 70 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage Continuous collector current Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 1) Continuous device.

BDX33B : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BDX33B/D Darlington Complementary Silicon Power Transistors designed for general purpose and low speed switching applications. • High DC Current Gain — hFE = 2500 (typ.) at IC = 4.0 • Collector–Emitter Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min.) — BDX33B, 34B VCEO(sus) = 100 Vdc (min.) — BDX33C, 34C • Low Collector–Emitter Saturation Voltage VCE(sat) = 2.5 Vdc (max.) at IC = 3.0 Adc — BDX33B, 33C/34B, 34C • Monolithic Construction with Build–In Base–Emitter Shunt resistors • TO–220AB Compact Package MAXIMUM RATINGS BDX33B BDX33C* BDX34B * BDX34C *Motorola Preferred Device NPN PNP ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ.




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