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BDY53

Part Number	BDY53
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Dec 10, 2012
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)=60V(Min.) ·Collector-Em...
Datasheet	BDY53 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)=60V(Min.
) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.
1 V(Max)@ IC = 4A ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 12 A IB Base Current 5 A PC Collector Power Dissipation@TC=25℃ 60 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ BDY53 isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors BDY53 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Vol...

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