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BDY53

Comset Semiconductors
Part Number BDY53
Manufacturer Comset Semiconductors
Description (BDY53 / BDY54) NPN SILICON TRANSISTORS
Published Dec 10, 2012
Detailed Description NPN BDY53 – BDY54 SILICON TRANSISTORS, DIFFUSED MESA They are mounted in TO-3 metal package. LF Large Signal Power Ampli...
Datasheet PDF File BDY53 PDF File

BDY53
BDY53

Overview
NPN BDY53 – BDY54 SILICON TRANSISTORS, DIFFUSED MESA They are mounted in TO-3 metal package.
LF Large Signal Power Amplification High Current Fast Switching Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO IC IB PTOT Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature TJ Ratings BDY53 BDY54 BDY53 BDY54 Value 60 120 100 180 7 12 5 Unit V V V A A W www.
DataSheet.
net/ @ TC = 25° 60 -65 to +200 TS Storage Temperature °C 08/11/2012 COMSET SEMICONDUCTORS 1|3 Datasheet pdf - http://www.
DataSheet4U.
co.
kr/ NPN BDY53 – BDY54 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO(SUS) IEBO Ratings Collector-Emitter Breakdown Voltage (*) Emitter-Base Cutoff Current Collector-Emitter Cutoff Current Test Condition(s) IC=100 mA, IB=0 VEB=7 V VCE=100 V VBE=-1.
5 V TCASE=150°C VCE=150 V VBE=-1.
5 V TCASE=150°C BDY53 BDY54 BDY53 BDY54 BDY53 Min 60 120 - Typ - Max 3.
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