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BDY54

Inchange Semiconductor
Part Number BDY54
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
Published Dec 10, 2012
Detailed Description isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 120V(Min.) ·Collector-...
Datasheet PDF File BDY54 PDF File

BDY54
BDY54


Overview
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 120V(Min.
) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.
1 V(Max)@ IC = 4A ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 12 A IB Base Current 5 A PC Collector Power Dissipation@TC=25℃ 60 W TJ Junction Temperature 200 ℃ Tstg St...



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