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BFW16A

Comset Semiconductors
Part Number BFW16A
Manufacturer Comset Semiconductors
Description HF Wideband Transistors
Published Dec 10, 2012
Detailed Description     NPN BFW16A HF WIDEBAND TRANSISTORS The BFW16A is NPN multi-emitter transistor in a TO-39 metal envolope, with the c...
Datasheet PDF File BFW16A PDF File

BFW16A
BFW16A


Overview
    NPN BFW16A HF WIDEBAND TRANSISTORS The BFW16A is NPN multi-emitter transistor in a TO-39 metal envolope, with the collector connected to the case.
The transistor has extremely good intermodulation properties and a high power gain.
It is a ruggedized version of the BFW16, which it succeds.
It is primarily intended for : •Final and driver stages of channel and band aerial amplifiers with high outpout power for bands I , II , III , IV , V (40-860 MHz).
•Final stage of the wideband vertical amplifier in high speed oscilloscopes.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBOM VEBO VCERM IC ICM Pt TJ TStg Ratings Collector-Emitter Voltage Collector-Base Voltage (open emitter ; peak value) Emitter-Base Voltage Collector-Emitter Voltage Collector Current Collector Peak Current Total Power Dissipation Junction Temperature Storage Temperature IB = 0 IE = 0 www.
DataSheet.
net/ Value 25 40 2 40 150 300 1.
5 200 -65 to +200 Unit V V V V mA mA W °C °C IC = 0 RBE<=50Ω @ TC = 125° THERMAL CHARACTERISTICS Symbol RthJa RthJmb RthJmb-h Ratings Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Mounting Base Thermal Resistance, Junction to Mounting Base to heatsink Value 250 50 1.
2 Unit K/W K/W K/W 09/11/2012   COMSET SEMICONDUCTORS 1|3 Datasheet pdf - http://www.
DataSheet4U.
co.
kr/     NPN BFW16A ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICB0 hFE fT CC Cre F GP Ratings Collector Cutoff Current DC Current Gain Transition frequency Collector capacitance at f=1MHz Feedback capacitance at f=1MHz Noise figure at f= 200 MHz Power gain (not neutralized) Test Condition(s) IE=0, VCB=20 V, TJ=150°C IC=50 m A, VCE=5.
0 V IC=150 mA, VCE=5.
0 V VCE=15 V, IC=150 mA f=500 MHz IE= Ie = 0, VCB=15 V IC= 10 mA, VCE=15 V Tamb= 25°C IC= 30 mA, VCE=15 V ZS= 75 Ω, Tamb= 25°C IC= 70 mA VCE=18 V Tamb= 25°C www.
DataSheet.
net/ Min 25 25 - Typ 1.
2 1.
7 16 6.
5 Max 20 4 Unit µA GHz pF 6 dB dB 200 MHz 800 MHz 09/11/2012   COMSET SE...



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