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TIC106M

Part Number	TIC106M
Manufacturer	Comset Semiconductors
Description	P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTOR
Published	Dec 12, 2012
Detailed Description	SEMICONDUCTORS TIC106A, TIC106B, TIC106C, TIC106D, TIC106E, TIC106M, TIC106N, TIC106S P-N-P-N SILICON REVERSE-BLOCKING ...
Datasheet	TIC106M PDF File

Overview

SEMICONDUCTORS TIC106A, TIC106B, TIC106C, TIC106D, TIC106E, TIC106M, TIC106N, TIC106S P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS • • • • • • 5 A Continuous On-State Current 30 A Surge-Current Glass Passivated Wafer 100 V to 800 V Off-State Voltage Max IGT of 200 µA Compliance to ROHS ABSOLUTE MAXIMUM RATINGS Value A http://www.
DataSheet4U.
net/ Symbol VDRM VRRM IT(RMS) IT(AV) ITM IGM PGM PG(AV) TC Tstg TL Ratings Repetitive peak off-state voltage (see Note1) Repetitive peak reverse voltage Continuous on-state current at (or below) 80°C case temperature (see note2) Average on-state current (180° conduction angle) at(or below) 80°C case temperature (see Note3) Surge on-state current (see Note4) Peak positive gate current (pulse width ≤300 µs) Peak power dissipation (pulse width ≤300 µs) Average gate power dissipation (see Note5) Operating case temperature range Storage temperature range Lead temperature 1.
6 mm from case for 10 seconds B C D E M S N Unit V V A A A A W W °C °C °C 100 200 300 400 500 600 700 800 100 200 300 400 500 600 700 800 5 3.
2 30 0.
2 1.
3 0.
3 -40 to +110 -40 to +125 230 29/10/2012 COMSET SEMICONDUCTORS 1|4 datasheet pdf - http://www.
DataSheet4U.
net/ SEMICONDUCTORS TIC106A, TIC106B, TIC106C, TIC106D, TIC106E, TIC106M, TIC106N, TIC106S THERMAL CHARACTERISTICS Symbol tgt tq R∂JC R∂JA Gate-controlled Turn-on time Ratings VAA = 30 V, RL = 6 Ω RGK(eff) = 5 kΩ Vin = 50 V VAA = 30 V, RL = 6 Ω IRM ≈ 8 A Value 1.
75 Unit µs 7.
7 ≤ 3.
5 ≤ 62.
5 °C/W Circuit-communicated Turn-off time Junction to case thermal resistance Junction to free air thermal resistance ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol IDRM IRRM IGT Ratings Repetitive peak off-state current Repetitive peak reverse current Gate trigger current Test Condition(s) http://www.
DataSheet4U.
net/ Min 0.
4 0.
2 - Typ 60 0.
6 10 Max 400 1 200 1.
2 1 5 Unit µA mA µA VGT Gate trigger voltage IH Holding current VTM dv/dt Peak on-state voltage Critical...

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