DatasheetsPDF.com

TIC106M

Part Number TIC106M
Manufacturer Comset Semiconductors
Title P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTOR
Description SEMICONDUCTORS TIC106A, TIC106B, TIC106C, TIC106D, TIC106E, TIC106M, TIC106N, TIC106S P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS • • • • ...
Features °C °C °C 100 200 300 400 500 600 700 800 100 200 300 400 500 600 700 800 5 3.2 30 0.2 1.3 0.3 -40 to +110 -40 to +125 230 29/10/2012 COMSET SEMICONDUCTORS 1|4 datasheet pdf - http://www.DataSheet4U.net/ SEMICONDUCTORS TIC106A, TIC106B, TIC106C, TIC106D, TIC106E, TIC106M, TIC106N, TIC106S THE...

File Size 214.42KB
Datasheet TIC106M PDF File







Similar Datasheet

TIC106 : TIC106 SERIES SILICON CONTROLLED RECTIFIERS Copyright © 1997, Power Innovations Limited, UK APRIL 1971 - REVISED MARCH 1997 q q q q q 5 A Continuous On-State Current 30 A Surge-Current Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max IGT of 200 µA K A G 1 2 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDC1ACA absolute maximum ratings over operating case temperature (unless otherwise noted) RATING TIC106D Repetitive peak off-state voltage (see Note 1) TIC106M TIC106S TIC106N TIC106D Repetitive peak reverse voltage TIC106M TIC106S TIC106N Continuous on-state current at (or below) 80°C case temperature (see Note 2) Average on-state current (1.

TIC106A : SEMICONDUCTORS TIC106A, TIC106B, TIC106C, TIC106D, TIC106E, TIC106M, TIC106N, TIC106S P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS • • • • • • 5 A Continuous On-State Current 30 A Surge-Current Glass Passivated Wafer 100 V to 800 V Off-State Voltage Max IGT of 200 µA Compliance to ROHS ABSOLUTE MAXIMUM RATINGS Value A http://www.DataSheet4U.net/ Symbol VDRM VRRM IT(RMS) IT(AV) ITM IGM PGM PG(AV) TC Tstg TL Ratings Repetitive peak off-state voltage (see Note1) Repetitive peak reverse voltage Continuous on-state current at (or below) 80°C case temperature (see note2) Average on-state current (180° conduction angle) at(or below) 80°C case temperature (see Note3) Surge on-state current.

TIC106B : SEMICONDUCTORS TIC106A, TIC106B, TIC106C, TIC106D, TIC106E, TIC106M, TIC106N, TIC106S P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS • • • • • • 5 A Continuous On-State Current 30 A Surge-Current Glass Passivated Wafer 100 V to 800 V Off-State Voltage Max IGT of 200 µA Compliance to ROHS ABSOLUTE MAXIMUM RATINGS Value A http://www.DataSheet4U.net/ Symbol VDRM VRRM IT(RMS) IT(AV) ITM IGM PGM PG(AV) TC Tstg TL Ratings Repetitive peak off-state voltage (see Note1) Repetitive peak reverse voltage Continuous on-state current at (or below) 80°C case temperature (see note2) Average on-state current (180° conduction angle) at(or below) 80°C case temperature (see Note3) Surge on-state current.

TIC106C : SEMICONDUCTORS TIC106A, TIC106B, TIC106C, TIC106D, TIC106E, TIC106M, TIC106N, TIC106S P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS • • • • • • 5 A Continuous On-State Current 30 A Surge-Current Glass Passivated Wafer 100 V to 800 V Off-State Voltage Max IGT of 200 µA Compliance to ROHS ABSOLUTE MAXIMUM RATINGS Value A http://www.DataSheet4U.net/ Symbol VDRM VRRM IT(RMS) IT(AV) ITM IGM PGM PG(AV) TC Tstg TL Ratings Repetitive peak off-state voltage (see Note1) Repetitive peak reverse voltage Continuous on-state current at (or below) 80°C case temperature (see note2) Average on-state current (180° conduction angle) at(or below) 80°C case temperature (see Note3) Surge on-state current.

TIC106C : isc Thyristors INCHANGE Semiconductor TIC106C APPLICATIONS ·It is suitable to fit all modes of control found in applications such as overvoltage crowbar protection,motor control circuits in power tools and kitchen aids,in-rush current limiting circuits, . capacitive discharge ignition, voltage regulation circuits etc. ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(RMS) RMS on-state current @Tc=80℃ IT(AV) Average on-state current @Tc=80℃ ITSM Surge non-repetitive on-state current Tj Operating junction temperat.

TIC106D : Thyristors TIC106D APPLICATIONS ·5A contimunous on-state current ·30A surge-current ·Max IGT of 200μA ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM Repetitive peak off-state voltage 400 V VRRM Repetitive peak reverse voltage 400 V IT(AV) On-state current Tc=80℃ 3.2 A IT(RMS) RMS on-state current Tc=80℃ 5 A ITM Surge peak on-state current 30 A PGM Peak gate power PW≤300μs 1.3 W PG(AV) Average gate power 0.3 W Tj Operating Junction temperature 110 ℃ Tstg Storage temperature -40 ~+125 ℃ Rth(j-c) Thermal resistance, junction to case 1.9 ℃/W Rth(j-a) Thermal resistance, junction to ambient 62.5 ℃/W ELECTRICAL CHARACTERISTICS (TC=25℃ u.

TIC106D : SEMICONDUCTORS TIC106A, TIC106B, TIC106C, TIC106D, TIC106E, TIC106M, TIC106N, TIC106S P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS • • • • • • 5 A Continuous On-State Current 30 A Surge-Current Glass Passivated Wafer 100 V to 800 V Off-State Voltage Max IGT of 200 µA Compliance to ROHS ABSOLUTE MAXIMUM RATINGS Value A http://www.DataSheet4U.net/ Symbol VDRM VRRM IT(RMS) IT(AV) ITM IGM PGM PG(AV) TC Tstg TL Ratings Repetitive peak off-state voltage (see Note1) Repetitive peak reverse voltage Continuous on-state current at (or below) 80°C case temperature (see note2) Average on-state current (180° conduction angle) at(or below) 80°C case temperature (see Note3) Surge on-state current.

TIC106D : TIC106 SERIES SILICON CONTROLLED RECTIFIERS 5 A Continuous On-State Current 30 A Surge-Current Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max IGT of 200 µA This series is obsolete and not recommended for new designs. TO-220 PACKAGE (TOP VIEW) K 1 A 2 G 3 Pin 2 is in electrical contact with the mounting base. MDC1ACA absolute maximum ratings over operating case temperature (unless otherwise noted) RATING SYMBOL TIC106D OBSOLETE Repetitive peak off-state voltage (see Note 1) TIC106M TIC106S TIC106N TIC106D Repetitive peak reverse voltage TIC106M TIC106S TIC106N Continuous on-state current at (or below) 80°C case temperature (see Note 2) Average on-state curre.

TIC106D : ® Jinglin Qidong Jilai Electronics Co., Ltd. SEMICONDUCTOR TECHNICAL DATA TIC106 Series(5A SCRS) TIC106 series 5A Continuous On-State Current 400V to 800V Off-State Voltage Max IGT of 200 A TO-220 PACKAGE ABSOLUTE RATING Symbol Parameter VDRM Repetitive peak off-state voltage TIC106D TIC106M TIC106S TIC106N VRRM Repetitive peak raverse voltage TIC106D TIC106M TIC106S TIC106N Continuous on-state current at(or below) 80 IT(RMS) case temperature Average on-state current(180 conduction IT(AV) angle) at (or below) 80 case temperature ITM IGM PGM PG(AV) TC Tstg Surge on-state current Peak positive gate current(pulse width 300 s) Peak gate power dissipation(pulse width 300 s) Average .

TIC106E : SEMICONDUCTORS TIC106A, TIC106B, TIC106C, TIC106D, TIC106E, TIC106M, TIC106N, TIC106S P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS • • • • • • 5 A Continuous On-State Current 30 A Surge-Current Glass Passivated Wafer 100 V to 800 V Off-State Voltage Max IGT of 200 µA Compliance to ROHS ABSOLUTE MAXIMUM RATINGS Value A http://www.DataSheet4U.net/ Symbol VDRM VRRM IT(RMS) IT(AV) ITM IGM PGM PG(AV) TC Tstg TL Ratings Repetitive peak off-state voltage (see Note1) Repetitive peak reverse voltage Continuous on-state current at (or below) 80°C case temperature (see note2) Average on-state current (180° conduction angle) at(or below) 80°C case temperature (see Note3) Surge on-state current.

TIC106M : isc Thyristors TIC106M APPLICATIONS ·5A contimunous on-state current ·30A surge-current ·Glass passivated ·Max IGT of 200μA ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(AV) On-state current Tc=80℃ IT(RMS) RMS on-state current Tc=80℃ ITM Surge peak on-state current PGM Peak gate power PW≤300μs PG(AV) Average gate power Tj Operating Junction temperature Tstg Storage temperature Rth(j-c) Thermal resistance, junction to case Rth(j-a) Thermal resistance, junction to ambient MIN 600 600 3.2 5.

TIC106M : ® Jinglin Qidong Jilai Electronics Co., Ltd. SEMICONDUCTOR TECHNICAL DATA TIC106 Series(5A SCRS) TIC106 series 5A Continuous On-State Current 400V to 800V Off-State Voltage Max IGT of 200 A TO-220 PACKAGE ABSOLUTE RATING Symbol Parameter VDRM Repetitive peak off-state voltage TIC106D TIC106M TIC106S TIC106N VRRM Repetitive peak raverse voltage TIC106D TIC106M TIC106S TIC106N Continuous on-state current at(or below) 80 IT(RMS) case temperature Average on-state current(180 conduction IT(AV) angle) at (or below) 80 case temperature ITM IGM PGM PG(AV) TC Tstg Surge on-state current Peak positive gate current(pulse width 300 s) Peak gate power dissipation(pulse width 300 s) Average .

TIC106M : TIC106 SERIES SILICON CONTROLLED RECTIFIERS 5 A Continuous On-State Current 30 A Surge-Current Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max IGT of 200 µA This series is obsolete and not recommended for new designs. TO-220 PACKAGE (TOP VIEW) K 1 A 2 G 3 Pin 2 is in electrical contact with the mounting base. MDC1ACA absolute maximum ratings over operating case temperature (unless otherwise noted) RATING SYMBOL TIC106D OBSOLETE Repetitive peak off-state voltage (see Note 1) TIC106M TIC106S TIC106N TIC106D Repetitive peak reverse voltage TIC106M TIC106S TIC106N Continuous on-state current at (or below) 80°C case temperature (see Note 2) Average on-state curre.

TIC106N : isc Thyristors TIC106N APPLICATIONS ·5A contimunous on-state current ·30A surge-current ·Glass passivated ·Max IGT of 200μA ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(AV) On-state current Tc=80℃ IT(RMS) RMS on-state current Tc=80℃ ITM Surge peak on-state current PGM Peak gate power PW≤300μs PG(AV) Average gate power Tj Operating Junction temperature Tstg Storage temperature Rth(j-c) Thermal resistance, junction to case Rth(j-a) Thermal resistance, junction to ambient MIN 800 800 3.2 5.

TIC106N : SEMICONDUCTORS TIC106A, TIC106B, TIC106C, TIC106D, TIC106E, TIC106M, TIC106N, TIC106S P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS • • • • • • 5 A Continuous On-State Current 30 A Surge-Current Glass Passivated Wafer 100 V to 800 V Off-State Voltage Max IGT of 200 µA Compliance to ROHS ABSOLUTE MAXIMUM RATINGS Value A http://www.DataSheet4U.net/ Symbol VDRM VRRM IT(RMS) IT(AV) ITM IGM PGM PG(AV) TC Tstg TL Ratings Repetitive peak off-state voltage (see Note1) Repetitive peak reverse voltage Continuous on-state current at (or below) 80°C case temperature (see note2) Average on-state current (180° conduction angle) at(or below) 80°C case temperature (see Note3) Surge on-state current.

TIC106N : TIC106 SERIES SILICON CONTROLLED RECTIFIERS 5 A Continuous On-State Current 30 A Surge-Current Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max IGT of 200 µA This series is obsolete and not recommended for new designs. TO-220 PACKAGE (TOP VIEW) K 1 A 2 G 3 Pin 2 is in electrical contact with the mounting base. MDC1ACA absolute maximum ratings over operating case temperature (unless otherwise noted) RATING SYMBOL TIC106D OBSOLETE Repetitive peak off-state voltage (see Note 1) TIC106M TIC106S TIC106N TIC106D Repetitive peak reverse voltage TIC106M TIC106S TIC106N Continuous on-state current at (or below) 80°C case temperature (see Note 2) Average on-state curre.




Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)