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SBP13009D

Winsemi
Part Number SBP13009D
Manufacturer Winsemi
Description High Voltage Fast-Switching NPN Power Transistor
Published Apr 18, 2013
Detailed Description SBP13009D High Voltage Fast-Switching NPN Power Transistor Features ◆ ◆ ◆ ◆ Very High Switching Speed High Voltage Capa...
Datasheet PDF File SBP13009D PDF File

SBP13009D
SBP13009D

Overview
SBP13009D High Voltage Fast-Switching NPN Power Transistor Features ◆ ◆ ◆ ◆ Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA Built-in free wheeling diode General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply.
Absolute Maximum Ratings Symbol VCES VCEO VEBO IC ICP IB IBM PC TJ TSTG Parameter Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector pulse Current Base Current Base Peak Current Total Dissipation at Tc = 25℃ Total Dissipation at Ta = 25℃ Operation Junction Temperature Storage Temperature tP = 5ms http://www.
DataSheet4U.
net/ Test Conditions VBE = 0 IB = 0 IC = 0 Value 700 400 9.
0 12 25 6.
0 12 100 2.
2 - 40 ~ 150 - 40 ~ 150 Units V V V A A A A W ℃ ℃ Tc: Case temperature (good cooling) Ta: Ambient temperature (without heat sink) Thermal Characteristics Symbol RθJc RθJA Parameter Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Value 1.
25 40 Units ℃/W ℃/W Jan 2009.
Rev.
0 Copyright @WinSemi Semiconductor Co.
,Ltd.
,All rights reserved.
1/5 datasheet pdf - http://www.
DataSheet4U.
net/ SBP13009D Electrical Characteristics (TC=25℃ unless otherwise noted) Symbol VCEO(sus) Value Parameter Test Conditions Min 400 Typ Max 0.
5 1.
0 1.
5 2.
0 1.
2 1.
6 1.
5 1.
0 5.
0 40 40 Units V Collector-Emitter Breakdown Voltage Ic=10mA,Ib=0 Ic=5.
0A,Ib=1.
0A Ic=8.
0A,Ib=1.
6A V VCE(sat) Collector-Emitter Saturation Voltage Ic=12A,Ib=3.
0A Ic=8.
0A,Ib=1.
6A Tc=100℃ I Ic=5.
0A,Ib=1.
0A - V V VBE(sat) Base-Emitter Saturation Voltage Ic=8.
0A,Ib=1.
6A Ic=8.
0A,Ib=1.
6A Tc=100℃ - V ICBO Collector-Base Cutoff Current (Vbe=-1.
5V) DC Current Gain Resistive Load Vcb=700V Vcb=700V, Tc=100℃ Vce=5V,Ic=5.
0A Vce=5V, Ic=8.
0A 10 6 - - mA hFE ts tf ts tf ts tf fT VF COB Storage Time Fall Time Inductive Load Storage Time Fall Time Inductive Load Storage Time Fall Time Current Gain Bandwidth P...


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