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2N6667

ON Semiconductor
Part Number 2N6667
Manufacturer ON Semiconductor
Description DARLINGTON POWER TRANSISTORS
Published Mar 22, 2005
Detailed Description com 2N6667, 2N6668 Darlington Silicon Power Transistors Designed for general−purpose amplifier and low ...
Datasheet PDF File 2N6667 PDF File

2N6667
2N6667

Overview
com 2N6667, 2N6668 Darlington Silicon Power Transistors Designed for general−purpose amplifier and low speed switching applications.
• High DC Current Gain − • • • • • • hFE = 3500 (Typ) @ IC = 4.
0 Adc Collector−Emitter Sustaining Voltage − @ 200 mAdc VCEO(sus) = 60 Vdc (Min) − 2N6667 = 80 Vdc (Min) − 2N6668 Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.
0 Vdc (Max)@ IC = 5.
0 Adc Monolithic Construction with Built−In Base−Emitter Shunt Resistors TO−220AB Compact Package Complementary to 2N6387, 2N6388 Pb−Free Packages are Available* http://onsemi.
com PNP SILICON DARLINGTON POWER TRANSISTORS 10 A, 60−80 V, 65 W MARKING DIAGRAM 4 COLLECTOR 1 2 3 STYLE 1: PIN 1.
2...


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