DatasheetsPDF.com

H27UAG8T2M

Hynix
Part Number H27UAG8T2M
Manufacturer Hynix
Description 16Gbit (2Gx8bit) NAND Flash
Published Jun 23, 2013
Detailed Description 1 Preliminary H27UAG8T2M 16Gbit (2Gx8bit) NAND Flash 16Gb NAND FLASH H27UAG8T2M http://www.DataSheet4U.net/ This docum...
Datasheet PDF File H27UAG8T2M PDF File

H27UAG8T2M
H27UAG8T2M

Overview
1 Preliminary H27UAG8T2M 16Gbit (2Gx8bit) NAND Flash 16Gb NAND FLASH H27UAG8T2M http://www.
DataSheet4U.
net/ This document is a general product description and is subject to change without notice.
Hynix does not assume any responsibility for use of circuits described.
No patent licenses are implied.
Rev 0.
2 / Apr.
2008 1 datasheet pdf - http://www.
DataSheet4U.
net/ 1Preliminary H27UAG8T2M 16Gbit (2Gx8bit) NAND Flash Document Title 16Gbit (2Gx8bit) NAND Flash Memory Revision History Revision No.
0.
0 Initial Draft.
1) Add ULGA Package - Figures & text are added.
1) Add the text relating to the multi-plane copyback function 0.
2 - Multi-Plane copyback function must be used in the block which has been programmed with Multi-Plane Page Program.
2) Correct the ball configuration of the LGA package.
Apr.
14.
2008 Preliminary History Draft Date Feb.
18.
2008 Remark Preliminary 0.
1 Mar.
27.
2008 Preliminary http://www.
DataSheet4U.
net/ Rev 0.
2 / Apr.
2008 2 datasheet pdf - http://www.
DataSheet4U.
net/ 1Preliminary H27UAG8T2M 16Gbit (2Gx8bit) NAND Flash FEATURES SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications MULTI-PLANE ARCHITECTURE - Array is split into two independent planes.
Parallel Operations on both planes are available, halving Program, read and erase time.
NAND INTERFACE - x8 bus width - Multiplexed address/ Data - Pinout compatibility for all densities SUPPLY VOLTAGE -3.
3V device : Vcc = 2.
7 V ~3.
6 V MEMORY CELL ARRAY - (4k + 128 ) bytes x 128 pages x 4096 blocks PAGE SIZE - x8 device : (4096+128 spare) bytes : H27UAG8T2M BLOCK SIZE - x8 device : (512K+16K) bytes PAGE READ / PROGRAM - Random access: 60us (Max) - Sequential access: 25ns (Min) - Page program time: 800us (Typ) - Multi-Plane page program time : 800us (Typ) COPY BACK PROGRAM -Fast page copy FAST BLOCK ERASE - Block erase time: 2.
5ms (Typ) - Multi-Plane block erase time (2blocks) : 2.
5ms(Typ) STATUS REGISTER ELECTRONIC SIGNATURE - 1st cycle: Manu...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)