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FDMS8622

Fairchild Semiconductor
Part Number FDMS8622
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Aug 8, 2013
Detailed Description FDMS8622 N-Channel Shielded Gate PowerTrench® MOSFET August 2018 FDMS8622 N-Channel Shielded Gate PowerTrench® MOSFET...
Datasheet PDF File FDMS8622 PDF File

FDMS8622
FDMS8622

Overview
FDMS8622 N-Channel Shielded Gate PowerTrench® MOSFET August 2018 FDMS8622 N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 16.
5 A, 56 m Features  Shielded Gate MOSFET Technology  Max rDS(on) = 56 m at VGS = 10 V, ID = 4.
8 A  Max rDS(on) = 88 m at VGS = 6 V, ID = 3.
9 A  High performance trench technology for extremely low rDS(on)  High power and current handling capability in a widely used surface mount package  100% UIL Tested  Termination is Lead-free and RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology.
This process has been optimized for rDS(on), switching performance and ruggedness.
Applications  POE Protection Switch  DC-DC Switch Top Bottom Pin 1 SS D S S G S D Power 56 D D D D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Pulsed TC = 25 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics S G (Note 1a) (Note 3) (Note 1a) D D Ratings 100 ±20 16.
5 4.
8 30 12 31 2.
5 -55 to +150 Units V V A mJ W °C RJC RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information (Note 1) (Note 1a) 4 50 °C/W Device Marking FDMS8622 Device FDMS8622 Package Power56 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units ©2011 Semiconductor Components Industries, LLC.
FDMS8622 Rev.
2 1 www.
onsemi.
com FDMS8622 N-Channel Shielded Gate PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Co...


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