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AP09N50P-HF

Advanced Power Electronics
Part Number AP09N50P-HF
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Aug 20, 2013
Detailed Description AP09N50P-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Fast Switching Character...
Datasheet PDF File AP09N50P-HF PDF File

AP09N50P-HF
AP09N50P-HF

Overview
AP09N50P-HF Halogen-Free Product Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 500V 0.
75Ω 9A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 and package is widely preferred for commercial-industrial applications.
The device is suited for switch mode power supplies, DC-AC converters and high current high speed switching circuits.
G D S TO-220(P) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 500 +30 9 5.
6 36 89 2 Units V V A A A W mJ ℃ ℃ Total Power Dissipation Single Pulse Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 18 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 1.
4 62 Units ℃/W ℃/W 1 200906041 Data and specifications subject to change without notice Free Datasheet http://www.
datasheet4u.
com/ AP09N50P-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance3 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 3 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=4.
5A VDS=VGS, ID=250uA VDS=10V, ID=6A VDS=400V, VGS=0V VGS=+30V, VDS=0V ID=6A VDS=400V VGS=10V VDD=250V ID=6A RG=50Ω,VGS=10V RD=42Ω VGS=0V VDS=25V f=1.
0MHz Min.
500 2 - Typ.
5.
1 32 7 14 35 45 164 48 125 7 Max.
Units 0.
75 4 100 +100 51 V Ω V S uA n...


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