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AP09N50P-HF-3

Advanced Power Electronics
Part Number AP09N50P-HF-3
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 25, 2014
Detailed Description Advanced Power Electronics Corp. AP09N50P-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Fast S...
Datasheet PDF File AP09N50P-HF-3 PDF File

AP09N50P-HF-3
AP09N50P-HF-3


Overview
Advanced Power Electronics Corp.
AP09N50P-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Fast Switching Speed RoHS-compliant, halogen-free G S D BV DSS R DS(ON) ID 500V 0.
75Ω 9.
0A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
The AP09N50P-HF-3 provides high blocking voltage to overcome voltage surge and sag in the toughest power systems with the best combination of fast switching and ruggedized design.
D (tab) G D S TO-220 (P) The TO-220 through-hole package is widely used in commercial and industrial applications where a small pcb footprint or an attached heatsink are required.
Absolute Maximum Ratings Symbol VDS VGS ID at TC =25°C ID at TC=100°C IDM PD at TC=25°C EAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 500 ±30 9.
0 5.
6 36 89 0.
71 2 Units V V A A A W W/ °C mJ °C °C Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 18 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 1.
4 62 Unit °C/W °C/W Ordering Information AP09N50P-HF-3TB : in RoHS-compliant halogen-free TO-220, shipped in tubes, (50 pcs/tube) ©2011 Advanced Power Electronics Corp.
USA www.
a-powerusa.
com 200906041-3 1/5 Advanced Power Electronics Corp.
Electrical Specifications at Tj=25°C (unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance3 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 3 AP09N50P-HF-3 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=4.
5A VDS=V...



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