DatasheetsPDF.com

SMG3403

SeCoS
Part Number SMG3403
Manufacturer SeCoS
Description P-Channel MOSFET
Published Aug 23, 2013
Detailed Description SMG3403 -3.7A, -30V,RDS(ON) 75m£[ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Pro...
Datasheet PDF File SMG3403 PDF File

SMG3403
SMG3403

Overview
SMG3403 -3.
7A, -30V,RDS(ON) 75m£[ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.
FET RoHS Compliant Product A Description The SMG3403 provide the designer with the best S combination of fast switching, low on-resistance and cost-effectiveness.
The SMG3403 is universally preferred for all commercial industrial surface mount application and suited for low voltage applications such as DC/DC converters.
2 L SC-59 Dim Min 2.
70 1.
40 1.
00 0.
35 1.
70 0.
00 0.
10 0.
20 0.
85 2.
40 Max 3.
10 1.
60 1.
30 0.
50 2.
10 0.
10 0.
26 0.
60 1.
15 2.
80 3 Top View B 1 A B C D G C J K Drain D G H J K L S Features * Small Package Outline * Simple Drive Requirment H Gate Source D All Dimension in mm Marking : 3403 G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg 3 3 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings -30 ±20 -3.
7 -3.
0 12 1.
38 0.
01 -55~+150 Unit V V A A A W W/ C o o C Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Max.
Ratings 90 Unit o Rthj-a C /W http://www.
SeCoSGmbH.
com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev.
A Free Datasheet http://www.
datasheet4u.
com/ Page 1 of 4 SMG3403 -3.
7A, -30V,RDS(ON) 75m£[ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.
FET Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=55 oC) Static Drain-Source On-Resistance 2 o o Symbol BVDSS BVDS/ Tj VGS(th) IGSS IDSS Min.
-30 _ Typ.
_ Max.
_ _ Unit V V/ C V nA uA uA o Test Condition VGS=0V, ID=-250uA Reference to 25 C, ID=-1mA VDS=VGS, ID=-250uA VGS=± 20V ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)