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SMG3407

SeCoS
Part Number SMG3407
Manufacturer SeCoS
Description P-Channel MOSFET
Published Aug 23, 2013
Detailed Description SMG3407 -4.1A, -30V,RDS(ON) 52m£[ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Pro...
Datasheet PDF File SMG3407 PDF File

SMG3407
SMG3407

Overview
SMG3407 -4.
1A, -30V,RDS(ON) 52m£[ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.
FET RoHS Compliant Product A Description The SMG 3407 uses advanced trench technology to provide excellent on-resistance with low gate change.
The device is suitable for use as a load switch or in PWM applications.
S 2 L SC-59 Dim Min 2.
70 1.
40 1.
00 0.
35 1.
70 0.
00 0.
10 0.
20 0.
85 2.
40 Max 3.
10 1.
60 1.
30 0.
50 2.
10 0.
10 0.
26 0.
60 1.
15 2.
80 3 Top View B 1 A B C D G D G C J K Features * Lower Gate Charge * Small Package Outline * RoHS Compliant Gate Source H J K H Drain L S D All Dimension in mm G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 1 Pulsed Drain Current Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Symbol Rthj-a Ratings -30 ±20 -4.
1 -3.
5 -20 1.
38 0.
01 -55 ~ +150 Ratings 90 Unit V V A A A W W/ Thermal Data Parameter 3 Thermal Resistance Junction-ambient Max.
Unit /W http://www.
SeCoSGmbH.
com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev.
A Free Datasheet http://www.
datasheet4u.
com/ Page 1 of 4 SMG3407 -4.
1A, -30V,RDS(ON) 52m£[ Elektronische Bauelemente Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=55 ) P-Channel Enhancement Mode Power Mos.
FET unless otherwise specified) Min.
-30 -1.
0 Typ.
8.
2 7 3.
1 3 8.
6 5 28.
2 13.
5 700 120 75 10 Max.
-3.
0 ±100 -1 -5 52 87 840 pF ns nC Unit V V S nA uA uA m Test Conditions VGS=0, ID=-250uA VDS=VGS, ID=-250uA VDS=-5V, ID=-4A VGS= ±20V VDS=-30V, VGS=0 VDS=-24V, VGS=0 VGS=-10V, ID=-4.
1A VGS=-4.
5V, ID=-3.
0A ID=-4A VDS=-15V VGS=-4.
5V VDS=-15V VGS=-10V RG=3 RL=3.
6 VGS=0V VDS=-15V f=1.
0MHz f=1.
0MHz Symbol BVDSS VGS(th) gfs...


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