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MSD602-RT1

Leshan Radio Company
Part Number MSD602-RT1
Manufacturer Leshan Radio Company
Description NPN General Purpose Amplifier Transistor Surface Mount
Published Aug 29, 2013
Detailed Description LESHAN RADIO COMPANY, LTD. NPN General Purpose Amplifier Transistor Surface Mount MSD602–RT1 COLLECTOR 3 3 2 1 2 BASE...
Datasheet PDF File MSD602-RT1 PDF File

MSD602-RT1
MSD602-RT1

Overview
LESHAN RADIO COMPANY, LTD.
NPN General Purpose Amplifier Transistor Surface Mount MSD602–RT1 COLLECTOR 3 3 2 1 2 BASE 1 EMITTER CASE 318D–03, STYLE1 SC–59 MAXIMUM RATINGS (T A = 25°C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current–Continuous Collector Current–Peak Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC IC(P) Symbol PD TJ T stg Value 60 50 7.
0 500 1.
0 Max 200 150 –55 ~ +150 Unit Vdc Vdc Vdc mAdc Adc Unit mW °C °C Symbol V(BR)CEO V(BR)CBO V(BR)EBO I CBO hFE1 hFE2 VCE(sat) Cob Min 50 60 7.
0 — 120 40 — — Max — — — 0.
1 240 — 0.
6 15 Unit Vdc Vdc Vdc µAdc — THERMAL CHARACTERISTICS Characteristic Power Dissipation Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS (T A = 25°C) Characteristic Collector-Emitter Breakdown Voltage (I C = 10 mAdc, I B = 0) Collector-Base Breakdown Voltage (I C = 10 µAdc, I E = 0) Emitter-Base Breakdown Voltage (I E = 10 µAdc, I C = 0) Collector-Base Cutoff Current (V CB = 20Vdc, I E = 0) DC Cur...


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