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MSD602-RT1

ETL
Part Number MSD602-RT1
Manufacturer ETL
Description NPN General Purpose Amplifier Transistor Surface Mount
Published Aug 29, 2013
Detailed Description NPN General Purpose Amplifier Transistor Surface Mount MSD602–RT1 COLLECTOR 3 3 1 2 2 BASE 1 EMITTER CASE 318D–03, ...
Datasheet PDF File MSD602-RT1 PDF File

MSD602-RT1
MSD602-RT1

Overview
NPN General Purpose Amplifier Transistor Surface Mount MSD602–RT1 COLLECTOR 3 3 1 2 2 BASE 1 EMITTER CASE 318D–03, STYLE1 SC–59 MAXIMUM RATINGS (T A = 25°C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current–Continuous Collector Current–Peak Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC IC(P) Symbol PD TJ T stg Value 60 50 7.
0 500 1.
0 Max 200 150 –55 ~ +150 Unit Vdc Vdc Vdc mAdc Adc Unit mW °C °C Symbol V(BR)CEO V(BR)CBO V(BR)EBO I CBO hFE1 hFE2 VCE(sat) Cob Min 50 60 7.
0 — 120 40 — — Max — — — 0.
1 240 — 0.
6 15 Unit Vdc Vdc Vdc µAdc — THERMAL CHARACTERISTICS Characteristic Power Dissipation Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS (T A = 25°C) Characteristic Collector-Emitter Breakdown Voltage (I C = 10 mAdc, I B = 0) Collector-Base Breakdown Voltage (I C = 10 µAdc, I E = 0) Emitter-Base Breakdown Voltage (I E = 10 µAdc, I C = 0) Collector-Base Cutoff Current (V CB = 20Vdc, I E = 0) DC Current Gain (1) (V CE = 10 Vdc...


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