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FDMC86324

Fairchild Semiconductor
Part Number FDMC86324
Manufacturer Fairchild Semiconductor
Description N-Channel Power Trench MOSFET
Published Sep 9, 2013
Detailed Description FDMC86324 N-Channel Power Trench® MOSFET May 2010 FDMC86324 N-Channel Power Trench® MOSFET 80 V, 20 A, 23 mΩ Features ...
Datasheet PDF File FDMC86324 PDF File

FDMC86324
FDMC86324

Overview
FDMC86324 N-Channel Power Trench® MOSFET May 2010 FDMC86324 N-Channel Power Trench® MOSFET 80 V, 20 A, 23 mΩ Features „ Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7 A „ Max rDS(on) = 37 mΩ at VGS = 6 V, ID = 4 A „ Low Profile - 1 mm max in Power 33 „ 100% UIL Tested „ RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Application „ DC - DC Conversion Top Bottom S Pin 1 S S D G D D D D D D D 5 6 7 8 4 3 2 1 G S S S Power 33 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25 °C TA = 25 °C (Note 1a) (Note 3) TC = 25 °C TC = 25 °C TA = 25 °C (Note 1a) Ratings 80 ±20 20 30 7 30 72 41 2.
3 -55 to +150 mJ W °C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 3 53 °C/W Package Marking and Ordering Information Device Marking FDMC86324 Device FDMC86324 Package Power 33 Reel Size 13’’ Tape Width 12 mm Quantity 3000 units ©2010 Fairchild Semiconductor Corporation FDMC86324 Rev.
C 1 www.
fairchildsemi.
com Free Datasheet http://www.
datasheet4u.
com/ FDMC86324 N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250 μA, VGS = 0 V ID = 250 μA, referenced to 25 °C VDS = 64 V, VGS = 0 V VGS = ±20 V, VDS = 0 V 8...


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