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AUIRF7313Q

International Rectifier
Part Number AUIRF7313Q
Manufacturer International Rectifier
Description Power MOSFET
Published Sep 9, 2013
Detailed Description PD - 97751 AUTOMOTIVE GRADE AUIRF7313Q HEXFET® Power MOSFET 8 7 Features l l l l l l l l Advanced Planar Technology D...
Datasheet PDF File AUIRF7313Q PDF File

AUIRF7313Q
AUIRF7313Q

Overview
PD - 97751 AUTOMOTIVE GRADE AUIRF7313Q HEXFET® Power MOSFET 8 7 Features l l l l l l l l Advanced Planar Technology Dual N Channel MOSFET Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Lead-Free, RoHS Compliant Automotive Qualified* S1 G1 S2 G2 1 2 D1 D1 D2 D2 3 4 6 5 Top View V(BR)DSS RDS(on) typ.
max.
ID 30V 23mΩ 29mΩ 6.
9A Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.
This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
SO-8 AUIRF7313Q Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter VDS Drain-Source Voltage Max.
30 Units V ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS EAS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range c e d 6.
9 5.
8 58 2.
4 0.
02 ± 20 450 3.
6 -55 to + 175 A W W/°C V mJ V/ns °C Thermal Resistance Parameter RθJL Junction-to-Drain Lead Max.
20 62.
5 Units °C/W RθJA Junction-to-Ambient gh HE...


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