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AUIRF7316Q

International Rectifier
Part Number AUIRF7316Q
Manufacturer International Rectifier
Description Power MOSFET
Published Sep 9, 2013
Detailed Description PD - 96365B AUIRF7316Q Features l l l l l l l l HEXFET® Power MOSFET D1 D1 D2 D2 Advanced Planar Technology Low On-Re...
Datasheet PDF File AUIRF7316Q PDF File

AUIRF7316Q
AUIRF7316Q


Overview
PD - 96365B AUIRF7316Q Features l l l l l l l l HEXFET® Power MOSFET D1 D1 D2 D2 Advanced Planar Technology Low On-Resistance Dual P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free, RoHS Compliant S1 G1 S2 G2 1 2 3 4 8 7 V(BR)DSS RDS(on) typ.
-30V 0.
042Ω 6 5 max.
0.
058Ω ID -4.
9A Top View Description Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of these Automotive qualified HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications.
This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.
SO-8 G D S Gate Drain Source Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter VDS ID @ TA = 25°C ID @ TA = 70°C IDM IS PD @TA = 25°C PD @TA = 70°C VGS EAS IAR EAR dv/dt TJ TSTG Drain-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Cur...


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