DatasheetsPDF.com

2SD1761

Part Number	2SD1761
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistors
Published	Sep 10, 2013
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·Wide Area of ...
Datasheet	2SD1761 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.
) ·Wide Area of Safe Operation ·Complement to Type 2SB1187 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 6 A 2 W 30 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1761 isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB=...

Similar Datasheet

2SD1700 NPN SILICON TRANSISTOR - NEC
2SD1701 NPN SILICON TRANSISTOR - NEC
2SD1702 NPN Transistor - NEC
2SD1705 Silicon NPN Transistor - Panasonic Semiconductor
2SD1705 NPN Transistor - INCHANGE
2SD1706 Silicon NPN Power Transistor - Inchange Semiconductor
2SD1707 Silicon NPN Transistor - Panasonic Semiconductor
2SD1707 NPN Transistor - INCHANGE
2SD1709 Silicon NPN Power Transistor - Inchange Semiconductor
2SD1710 NPN Transistor - INCHANGE

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)