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2SA1933

Part Number	2SA1933
Manufacturer	Toshiba Semiconductor
Description	Silicon PNP Epitaxial Type Transistor
Published	Mar 22, 2005
Detailed Description	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1933 2SA1933 High-Current Switching Applications Indus...
Datasheet	2SA1933 PDF File

Overview

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1933 2SA1933 High-Current Switching Applications Industrial Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.
4 V (max) (IC = −2 A) • High-speed switching time: tstg = 1.
0 μs (typ.
) • Complementary to 2SC5175 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg −60 −50 −7 −5 −1 1.
8 150 −55 to 150 V V V A A W °C °C JEDEC JEITA ― ― Note: Using continuously under heavy lo...

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