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2SA1943

Toshiba Semiconductor

Silicon PNP Transistor

TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1943 Power Amplifier Applications 2SA1943 Unit: mm • High colle...


Toshiba Semiconductor

2SA1943

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TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1943 Power Amplifier Applications 2SA1943 Unit: mm High collector voltage: VCEO = −230 V (min) Complementary to 2SC5200 Recommended for 100-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −230 V Collector-emitter voltage VCEO −230 V Emitter-base voltage VEBO −5 V Collector current IC −15 A Base current IB −1.5 A Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range PC 150 W Tj 150 °C Tstg −55 to 150 °C JEDEC JEITA TOSHIBA ― ― 2-21F1A Note: Using continuously under heavy loads (e.g. the application of high Weight: 9.75 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 1994-09 1 2016-01-07 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current Collector-emitter b...




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