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2SA1943

Toshiba Semiconductor
Part Number 2SA1943
Manufacturer Toshiba Semiconductor
Description Silicon PNP Transistor
Published Mar 22, 2005
Detailed Description TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1943 Power Amplifier Applications 2SA1943 Unit: mm • High colle...
Datasheet PDF File 2SA1943 PDF File

2SA1943
2SA1943


Overview
TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1943 Power Amplifier Applications 2SA1943 Unit: mm • High collector voltage: VCEO = −230 V (min) • Complementary to 2SC5200 • Recommended for 100-W high-fidelity audio frequency amplifier output stage.
Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −230 V Collector-emitter voltage VCEO −230 V Emitter-base voltage VEBO −5 V Collector current IC −15 A Base current IB −1.
5 A Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range PC 150 W Tj 150 °C Tstg −55 to 150 °C JEDEC JEITA TOSHIBA ― ― 2-21F1A Note: Using continuously under...



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