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2SA1971

Toshiba Semiconductor
Part Number 2SA1971
Manufacturer Toshiba Semiconductor
Description Silicon PNP Transistor
Published Mar 22, 2005
Detailed Description TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1971 High-Voltage Switching Applications 2SA1971 Unit: mm • Hig...
Datasheet PDF File 2SA1971 PDF File

2SA1971
2SA1971

Overview
TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1971 High-Voltage Switching Applications 2SA1971 Unit: mm • High breakdown voltage: VCEO = −400 V Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Ta = 25°C Ta = 25°C (Note 1) VCBO VCEO VEBO IC ICP IB PC −400 V −400 V −7 V −0.
5 A −1 −0.
25 A 500 mW 1000 Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C Note 1: Mounted on a ceramic substrate 250 mm2 × 0.
8 t JEDEC ― JEITA ― TOSHIBA 2-5K1A Weight: 0.
05 g (typ.
) Note 2: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Start of commercial production 1995-07 1 2013-11-01 2SA1971 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Switching time Storage time Fall time Symbol Test Condition ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob VCB = −400 V, IE = 0 VEB = −7 V, IC = 0 IC = −10 mA, IB = 0 VCE = −5 V, IC = −20 mA VCE = −5 V, IC = −100 mA IC = −100 mA, IB = −10 mA IC = −100 mA, IB = −10 mA VCE = −5 V, IC = −50 mA VCB = −10 V, IE = 0, f = 1 MHz Min Ty...


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